Title: Silicon-based visible and near-infrared optoelectric devices

Abstract

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Inventors:

Mazur, Eric ^[1]; Carey, III, James Edward ^[2]

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+ Show Inventor Affiliations

1. Concord, MA
2. (Newton, MA)

Issue Date:

Tue Mar 17 00:00:00 EDT 2009

Research Org.:

Harvard University

Sponsoring Org.:

USDOE

OSTI Identifier:

988385

Patent Number(s):

7504702

Application Number:

11/445,900

Assignee:

President & Fellows of Harvard College (Cambridge, MA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02686 - {Pulsed laser beam}
H01L21/268 - using electromagnetic radiation, e.g. laser radiation
H01L31/0236 - Special surface textures
H01L31/02363 - {of the semiconductor body itself, e.g. textured active layers}
H01L31/028 - including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L31/0288 - characterised by the doping material
H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/068 - the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/1864 - {Annealing}
H01L31/1872 - {Recrystallisation}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/52 - PV systems with concentrators
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S438/94 - Laser ablative material removal

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DOE Contract Number:  

FC36-01GO11051

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

47 OTHER INSTRUMENTATION