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Title: Clathrate compounds and method of manufacturing

Abstract

The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si.sub.136-yGe.sub.y, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.

Inventors:
 [1];  [1];  [1]
  1. Tampa, FL
Issue Date:
Research Org.:
University of South Florida (Tampa, FL)
Sponsoring Org.:
USDOE
OSTI Identifier:
988148
Patent Number(s):
7534414
Application Number:
12/104,016
Assignee:
University of South Florida (Tampa, FL)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-04ER46146
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Nolas, George S, Witanachchi, Sarath, and Mukherjee, Pritish. Clathrate compounds and method of manufacturing. United States: N. p., 2009. Web.
Nolas, George S, Witanachchi, Sarath, & Mukherjee, Pritish. Clathrate compounds and method of manufacturing. United States.
Nolas, George S, Witanachchi, Sarath, and Mukherjee, Pritish. Tue . "Clathrate compounds and method of manufacturing". United States. https://www.osti.gov/servlets/purl/988148.
@article{osti_988148,
title = {Clathrate compounds and method of manufacturing},
author = {Nolas, George S and Witanachchi, Sarath and Mukherjee, Pritish},
abstractNote = {The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si.sub.136-yGe.sub.y, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {5}
}

Patent:

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