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Title: Method and system for nanoscale plasma processing of objects

Abstract

A plasma processing system includes a source of plasma, a substrate and a shutter positioned in close proximity to the substrate. The substrate/shutter relative disposition is changed for precise control of substrate/plasma interaction. This way, the substrate interacts only with a fully established, stable plasma for short times required for nanoscale processing of materials. The shutter includes an opening of a predetermined width, and preferably is patterned to form an array of slits with dimensions that are smaller than the Debye screening length. This enables control of the substrate/plasma interaction time while avoiding the ion bombardment of the substrate in an undesirable fashion. The relative disposition between the shutter and the substrate can be made either by moving the shutter or by moving the substrate.

Inventors:
 [1];  [2];  [3]
  1. Clarksville, MD
  2. Hyattsville, MD
  3. Baden-Wuerttemberg, DE
Issue Date:
Research Org.:
University of Maryland (College Park, MD)
Sponsoring Org.:
USDOE
OSTI Identifier:
985544
Patent Number(s):
7470329
Application Number:
10/913,323
Assignee:
University of Maryland (College Park, MD)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
FRS527430
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY

Citation Formats

Oehrlein, Gottlieb S, Hua, Xuefeng, and Stolz, Christian. Method and system for nanoscale plasma processing of objects. United States: N. p., 2008. Web.
Oehrlein, Gottlieb S, Hua, Xuefeng, & Stolz, Christian. Method and system for nanoscale plasma processing of objects. United States.
Oehrlein, Gottlieb S, Hua, Xuefeng, and Stolz, Christian. Tue . "Method and system for nanoscale plasma processing of objects". United States. https://www.osti.gov/servlets/purl/985544.
@article{osti_985544,
title = {Method and system for nanoscale plasma processing of objects},
author = {Oehrlein, Gottlieb S and Hua, Xuefeng and Stolz, Christian},
abstractNote = {A plasma processing system includes a source of plasma, a substrate and a shutter positioned in close proximity to the substrate. The substrate/shutter relative disposition is changed for precise control of substrate/plasma interaction. This way, the substrate interacts only with a fully established, stable plasma for short times required for nanoscale processing of materials. The shutter includes an opening of a predetermined width, and preferably is patterned to form an array of slits with dimensions that are smaller than the Debye screening length. This enables control of the substrate/plasma interaction time while avoiding the ion bombardment of the substrate in an undesirable fashion. The relative disposition between the shutter and the substrate can be made either by moving the shutter or by moving the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {12}
}

Patent:

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