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Title: Method to control residual stress in a film structure and a system thereof

Abstract

A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.

Inventors:
 [1]
  1. (Rochester, NY)
Issue Date:
Research Org.:
Infotonics Tech Center
Sponsoring Org.:
USDOE
OSTI Identifier:
985541
Patent Number(s):
7470462
Application Number:
11/061,429
Assignee:
USDOE Rochester Institute of Technology (Rochester, NY)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
DOE Contract Number:  
FG02-02ER63410
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Parthum, Sr., Michael J. Method to control residual stress in a film structure and a system thereof. United States: N. p., 2008. Web.
Parthum, Sr., Michael J. Method to control residual stress in a film structure and a system thereof. United States.
Parthum, Sr., Michael J. Tue . "Method to control residual stress in a film structure and a system thereof". United States. https://www.osti.gov/servlets/purl/985541.
@article{osti_985541,
title = {Method to control residual stress in a film structure and a system thereof},
author = {Parthum, Sr., Michael J.},
abstractNote = {A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {12}
}

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