Continuous growth of single-wall carbon nanotubes using chemical vapor deposition
Abstract
The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.
- Inventors:
-
- Raymond, OH
- Evergreen, CO
- Boulder, CO
- Denver, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 985412
- Patent Number(s):
- 7431965
- Application Number:
- 10/700,386
- Assignee:
- Honda Motor Co., Ltd. (Tokyo, JP)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Grigorian, Leonid, Hornyak, Louis, Dillon, Anne C, and Heben, Michael J. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition. United States: N. p., 2008.
Web.
Grigorian, Leonid, Hornyak, Louis, Dillon, Anne C, & Heben, Michael J. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition. United States.
Grigorian, Leonid, Hornyak, Louis, Dillon, Anne C, and Heben, Michael J. Tue .
"Continuous growth of single-wall carbon nanotubes using chemical vapor deposition". United States. https://www.osti.gov/servlets/purl/985412.
@article{osti_985412,
title = {Continuous growth of single-wall carbon nanotubes using chemical vapor deposition},
author = {Grigorian, Leonid and Hornyak, Louis and Dillon, Anne C and Heben, Michael J},
abstractNote = {The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {10}
}
Works referenced in this record:
Chemical vapor deposition of methane for single-walled carbon nanotubes
journal, August 1998
- Kong, Jing; Cassell, Alan M.; Dai, Hongjie
- Chemical Physics Letters, Vol. 292, Issue 4-6
Chemical Vapor Deposition Based Synthesis of Carbon Nanotubes and Nanofibers Using a Template Method
journal, January 1998
- Che, G.; Lakshmi, B. B.; Martin, C. R.
- Chemistry of Materials, Vol. 10, Issue 1