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Title: Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

Abstract

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Inventors:
 [1];  [2];  [3];  [4]
  1. Raymond, OH
  2. Evergreen, CO
  3. Boulder, CO
  4. Denver, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
985412
Patent Number(s):
7431965
Application Number:
10/700,386
Assignee:
Honda Motor Co., Ltd. (Tokyo, JP)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Grigorian, Leonid, Hornyak, Louis, Dillon, Anne C, and Heben, Michael J. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition. United States: N. p., 2008. Web.
Grigorian, Leonid, Hornyak, Louis, Dillon, Anne C, & Heben, Michael J. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition. United States.
Grigorian, Leonid, Hornyak, Louis, Dillon, Anne C, and Heben, Michael J. Tue . "Continuous growth of single-wall carbon nanotubes using chemical vapor deposition". United States. https://www.osti.gov/servlets/purl/985412.
@article{osti_985412,
title = {Continuous growth of single-wall carbon nanotubes using chemical vapor deposition},
author = {Grigorian, Leonid and Hornyak, Louis and Dillon, Anne C and Heben, Michael J},
abstractNote = {The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {10}
}

Patent:

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Works referenced in this record:

Chemical vapor deposition of methane for single-walled carbon nanotubes
journal, August 1998


Chemical Vapor Deposition Based Synthesis of Carbon Nanotubes and Nanofibers Using a Template Method
journal, January 1998