Method of fabricating an optoelectronic device having a bulk heterojunction
Abstract
A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.
- Inventors:
-
- Ann Arbor, MI
- Princeton, NJ
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 985396
- Patent Number(s):
- 7435617
- Application Number:
- 10/999,716
- Assignee:
- The Trustees of Princeton University (Princeton, NJ)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Shtein, Max, Yang, Fan, and Forrest, Stephen R. Method of fabricating an optoelectronic device having a bulk heterojunction. United States: N. p., 2008.
Web.
Shtein, Max, Yang, Fan, & Forrest, Stephen R. Method of fabricating an optoelectronic device having a bulk heterojunction. United States.
Shtein, Max, Yang, Fan, and Forrest, Stephen R. Tue .
"Method of fabricating an optoelectronic device having a bulk heterojunction". United States. https://www.osti.gov/servlets/purl/985396.
@article{osti_985396,
title = {Method of fabricating an optoelectronic device having a bulk heterojunction},
author = {Shtein, Max and Yang, Fan and Forrest, Stephen R},
abstractNote = {A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {10}
}
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