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Title: Optic probe for semiconductor characterization

Abstract

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

Inventors:
 [1];  [2]
  1. Denver, CO
  2. Yerevan, AM
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
984969
Patent Number(s):
7420669
Application Number:
10/543,970
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Sopori, Bhushan L, and Hambarian, Artak. Optic probe for semiconductor characterization. United States: N. p., 2008. Web.
Sopori, Bhushan L, & Hambarian, Artak. Optic probe for semiconductor characterization. United States.
Sopori, Bhushan L, and Hambarian, Artak. Tue . "Optic probe for semiconductor characterization". United States. https://www.osti.gov/servlets/purl/984969.
@article{osti_984969,
title = {Optic probe for semiconductor characterization},
author = {Sopori, Bhushan L and Hambarian, Artak},
abstractNote = {Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {9}
}

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