Optic probe for semiconductor characterization
Abstract
Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).
- Inventors:
-
- Denver, CO
- Yerevan, AM
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 984969
- Patent Number(s):
- 7420669
- Application Number:
- 10/543,970
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Sopori, Bhushan L, and Hambarian, Artak. Optic probe for semiconductor characterization. United States: N. p., 2008.
Web.
Sopori, Bhushan L, & Hambarian, Artak. Optic probe for semiconductor characterization. United States.
Sopori, Bhushan L, and Hambarian, Artak. Tue .
"Optic probe for semiconductor characterization". United States. https://www.osti.gov/servlets/purl/984969.
@article{osti_984969,
title = {Optic probe for semiconductor characterization},
author = {Sopori, Bhushan L and Hambarian, Artak},
abstractNote = {Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {9}
}
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