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Title: Reactive codoping of GaAlInP compound semiconductors

Abstract

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Inventors:
 [1];  [2]
  1. Boulder, CO
  2. Golden, CO
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
983100
Patent Number(s):
7,329,554
Application Number:
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Hanna, Mark Cooper, and Reedy, Robert. Reactive codoping of GaAlInP compound semiconductors. United States: N. p., 2008. Web.
Hanna, Mark Cooper, & Reedy, Robert. Reactive codoping of GaAlInP compound semiconductors. United States.
Hanna, Mark Cooper, and Reedy, Robert. Tue . "Reactive codoping of GaAlInP compound semiconductors". United States. https://www.osti.gov/servlets/purl/983100.
@article{osti_983100,
title = {Reactive codoping of GaAlInP compound semiconductors},
author = {Hanna, Mark Cooper and Reedy, Robert},
abstractNote = {A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {2}
}

Patent:

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