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Title: High-resolution ionization detector and array of such detectors

Abstract

A high-resolution ionization detector and an array of such detectors are described which utilize a reference pattern of conductive or semiconductive material to form interaction, pervious and measurement regions in an ionization substrate of, for example, CdZnTe material. The ionization detector is a room temperature semiconductor radiation detector. Various geometries of such a detector and an array of such detectors produce room temperature operated gamma ray spectrometers with relatively high resolution. For example, a 1 cm.sup.3 detector is capable of measuring .sup.137 Cs 662 keV gamma rays with room temperature energy resolution approaching 2% at FWHM. Two major types of such detectors include a parallel strip semiconductor Frisch grid detector and the geometrically weighted trapezoid prism semiconductor Frisch grid detector. The geometrically weighted detector records room temperature (24.degree. C.) energy resolutions of 2.68% FWHM for .sup.137 Cs 662 keV gamma rays and 2.45% FWHM for .sup.60 Co 1.332 MeV gamma rays. The detectors perform well without any electronic pulse rejection, correction or compensation techniques. The devices operate at room temperature with simple commercially available NIM bin electronics and do not require special preamplifiers or cooling stages for good spectroscopic results.

Inventors:
 [1];  [2]
  1. Ypsilanti, MI
  2. Pleasanton, CA
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
982806
Patent Number(s):
6175120
Application Number:
09/075,351
Assignee:
The Regents of The University of Michigan (Ann Arbor, MI); Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

McGregor, Douglas S, and Rojeski, Ronald A. High-resolution ionization detector and array of such detectors. United States: N. p., 2001. Web.
McGregor, Douglas S, & Rojeski, Ronald A. High-resolution ionization detector and array of such detectors. United States.
McGregor, Douglas S, and Rojeski, Ronald A. Tue . "High-resolution ionization detector and array of such detectors". United States. https://www.osti.gov/servlets/purl/982806.
@article{osti_982806,
title = {High-resolution ionization detector and array of such detectors},
author = {McGregor, Douglas S and Rojeski, Ronald A},
abstractNote = {A high-resolution ionization detector and an array of such detectors are described which utilize a reference pattern of conductive or semiconductive material to form interaction, pervious and measurement regions in an ionization substrate of, for example, CdZnTe material. The ionization detector is a room temperature semiconductor radiation detector. Various geometries of such a detector and an array of such detectors produce room temperature operated gamma ray spectrometers with relatively high resolution. For example, a 1 cm.sup.3 detector is capable of measuring .sup.137 Cs 662 keV gamma rays with room temperature energy resolution approaching 2% at FWHM. Two major types of such detectors include a parallel strip semiconductor Frisch grid detector and the geometrically weighted trapezoid prism semiconductor Frisch grid detector. The geometrically weighted detector records room temperature (24.degree. C.) energy resolutions of 2.68% FWHM for .sup.137 Cs 662 keV gamma rays and 2.45% FWHM for .sup.60 Co 1.332 MeV gamma rays. The detectors perform well without any electronic pulse rejection, correction or compensation techniques. The devices operate at room temperature with simple commercially available NIM bin electronics and do not require special preamplifiers or cooling stages for good spectroscopic results.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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Works referenced in this record:

Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors
journal, March 1975


Single‐polarity charge sensing in ionization detectors using coplanar electrodes
journal, November 1994


Unipolar charge sensing with coplanar electrodes-application to semiconductor detectors
journal, January 1995


Novel electrode design for single-carrier charge collection in semiconductor nuclear radiation detectors
journal, September 1997


Single charge carrier type sensing with a parallel strip pseudo-Frisch-grid CdZnTe semiconductor radiation detector
journal, February 1998


CdZnTe semiconductor parallel strip Frisch grid radiation detectors
journal, June 1998