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Title: Ramp-edge structured tunneling devices using ferromagnet electrodes

Abstract

The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La.sub.0.7 Sr.sub.0.3) MnO.sub.3, ferromagnetic electrodes and a SrTiO.sub.3 insulator is disclosed. The maximum junction magnetoresistance (JMR) as large as 23% was observed below 300 Oe at low temperatures (T<100 K). These ramp-edge junctions exhibited JMR of 6% at 200 K with a field less than 100 Oe.

Inventors:
 [1];  [2]
  1. Long Beach, CA
  2. Los Alamos, NM
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
982803
Patent Number(s):
6445024
Application Number:
09/491,061
Assignee:
The United States of America, as represented by the Department of Energy (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01F - MAGNETS
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Kwon, Chuhee, and Jia, Quanxi. Ramp-edge structured tunneling devices using ferromagnet electrodes. United States: N. p., 2002. Web.
Kwon, Chuhee, & Jia, Quanxi. Ramp-edge structured tunneling devices using ferromagnet electrodes. United States.
Kwon, Chuhee, and Jia, Quanxi. Tue . "Ramp-edge structured tunneling devices using ferromagnet electrodes". United States. https://www.osti.gov/servlets/purl/982803.
@article{osti_982803,
title = {Ramp-edge structured tunneling devices using ferromagnet electrodes},
author = {Kwon, Chuhee and Jia, Quanxi},
abstractNote = {The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La.sub.0.7 Sr.sub.0.3) MnO.sub.3, ferromagnetic electrodes and a SrTiO.sub.3 insulator is disclosed. The maximum junction magnetoresistance (JMR) as large as 23% was observed below 300 Oe at low temperatures (T<100 K). These ramp-edge junctions exhibited JMR of 6% at 200 K with a field less than 100 Oe.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {9}
}

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Works referenced in this record:

Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions
journal, March 1997


High-temperature superconductor edge-geometry SNS junctions with engineered normal-metal layers
journal, November 1996


Observation of large low‐field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites
journal, November 1996