Wafer bonded epitaxial templates for silicon heterostructures
Abstract
A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.
- Inventors:
-
- (So. Pasadena, CA)
- Pasadena, CA
- Paris, FR
- Issue Date:
- Research Org.:
- California Institute of Technology (CalTech), Pasadena, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 970493
- Patent Number(s):
- 7341927
- Application Number:
- 11/004,808
- Assignee:
- California Institute of Technology (Pasadena, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-99G010337
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2004 Dec 07
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Atwater, Jr., Harry A., Zahler, James M, and Morral, Anna Fontcubera I. Wafer bonded epitaxial templates for silicon heterostructures. United States: N. p., 2008.
Web.
Atwater, Jr., Harry A., Zahler, James M, & Morral, Anna Fontcubera I. Wafer bonded epitaxial templates for silicon heterostructures. United States.
Atwater, Jr., Harry A., Zahler, James M, and Morral, Anna Fontcubera I. Tue .
"Wafer bonded epitaxial templates for silicon heterostructures". United States. https://www.osti.gov/servlets/purl/970493.
@article{osti_970493,
title = {Wafer bonded epitaxial templates for silicon heterostructures},
author = {Atwater, Jr., Harry A. and Zahler, James M and Morral, Anna Fontcubera I},
abstractNote = {A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 11 00:00:00 EDT 2008},
month = {Tue Mar 11 00:00:00 EDT 2008}
}
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