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Title: Wafer bonded epitaxial templates for silicon heterostructures

Abstract

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Inventors:
 [1];  [2];  [3]
  1. (So. Pasadena, CA)
  2. Pasadena, CA
  3. Paris, FR
Issue Date:
Research Org.:
California Institute of Technology (CalTech), Pasadena, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
970493
Patent Number(s):
7341927
Application Number:
11/004,808
Assignee:
California Institute of Technology (Pasadena, CA)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-99G010337
Resource Type:
Patent
Resource Relation:
Patent File Date: 2004 Dec 07
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Atwater, Jr., Harry A., Zahler, James M, and Morral, Anna Fontcubera I. Wafer bonded epitaxial templates for silicon heterostructures. United States: N. p., 2008. Web.
Atwater, Jr., Harry A., Zahler, James M, & Morral, Anna Fontcubera I. Wafer bonded epitaxial templates for silicon heterostructures. United States.
Atwater, Jr., Harry A., Zahler, James M, and Morral, Anna Fontcubera I. Tue . "Wafer bonded epitaxial templates for silicon heterostructures". United States. https://www.osti.gov/servlets/purl/970493.
@article{osti_970493,
title = {Wafer bonded epitaxial templates for silicon heterostructures},
author = {Atwater, Jr., Harry A. and Zahler, James M and Morral, Anna Fontcubera I},
abstractNote = {A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {3}
}

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