GaTe semiconductor for radiation detection
Abstract
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
- Inventors:
-
- Castro Valley, CA
- Nashville, TN
- Ashland, MA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 968975
- Patent Number(s):
- 7550735
- Application Number:
- 11/824,094
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Payne, Stephen A, Burger, Arnold, and Mandal, Krishna C. GaTe semiconductor for radiation detection. United States: N. p., 2009.
Web.
Payne, Stephen A, Burger, Arnold, & Mandal, Krishna C. GaTe semiconductor for radiation detection. United States.
Payne, Stephen A, Burger, Arnold, and Mandal, Krishna C. Tue .
"GaTe semiconductor for radiation detection". United States. https://www.osti.gov/servlets/purl/968975.
@article{osti_968975,
title = {GaTe semiconductor for radiation detection},
author = {Payne, Stephen A and Burger, Arnold and Mandal, Krishna C},
abstractNote = {GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {6}
}
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Works referenced in this record:
Deep level transient spectroscopy of anisotropic semiconductor GaTe
journal, August 1994
- Pal, D.; Pal, S.; Bose, D. N.
- Bulletin of Materials Science, Vol. 17, Issue 4
Anharmonicity in GaTe layered crystals
journal, December 2002
- Aydinli, A.; Gasanly, N. M.; Uka, A.
- Crystal Research and Technology, Vol. 37, Issue 12