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Title: Advanced insulated gate bipolar transistor gate drive

Abstract

A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

Inventors:
 [1];  [2];  [3]
  1. Monongahela, PA
  2. West Mifflin, PA
  3. Donora, PA
Issue Date:
Research Org.:
BECHTEL BETTIS, INC.
Sponsoring Org.:
USDOE
OSTI Identifier:
968332
Patent Number(s):
7570101
Application Number:
12/037,991
Assignee:
The United States of America as represented by the United States Department of Energy (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03K - PULSE TECHNIQUE
DOE Contract Number:  
AC11-98PN38206
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Short, James Evans, West, Shawn Michael, and Fabean, Robert J. Advanced insulated gate bipolar transistor gate drive. United States: N. p., 2009. Web.
Short, James Evans, West, Shawn Michael, & Fabean, Robert J. Advanced insulated gate bipolar transistor gate drive. United States.
Short, James Evans, West, Shawn Michael, and Fabean, Robert J. Tue . "Advanced insulated gate bipolar transistor gate drive". United States. https://www.osti.gov/servlets/purl/968332.
@article{osti_968332,
title = {Advanced insulated gate bipolar transistor gate drive},
author = {Short, James Evans and West, Shawn Michael and Fabean, Robert J},
abstractNote = {A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {8}
}

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