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Title: Molten-Salt-Based Growth of Group III Nitrides

Abstract

A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.

Inventors:
 [1];  [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM
Sponsoring Org.:
USDOE
OSTI Identifier:
953743
Patent Number(s):
7,435,297
Application Number:
11/102,357
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Waldrip, Karen E, Tsao, Jeffrey Y, and Kerley, Thomas M. Molten-Salt-Based Growth of Group III Nitrides. United States: N. p., 2008. Web.
Waldrip, Karen E, Tsao, Jeffrey Y, & Kerley, Thomas M. Molten-Salt-Based Growth of Group III Nitrides. United States.
Waldrip, Karen E, Tsao, Jeffrey Y, and Kerley, Thomas M. Tue . "Molten-Salt-Based Growth of Group III Nitrides". United States. https://www.osti.gov/servlets/purl/953743.
@article{osti_953743,
title = {Molten-Salt-Based Growth of Group III Nitrides},
author = {Waldrip, Karen E and Tsao, Jeffrey Y and Kerley, Thomas M},
abstractNote = {A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {10}
}

Patent:

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