Molten-Salt-Based Growth of Group III Nitrides
Abstract
A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 953743
- Patent Number(s):
- 7435297
- Application Number:
- 11/102,357
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Waldrip, Karen E, Tsao, Jeffrey Y, and Kerley, Thomas M. Molten-Salt-Based Growth of Group III Nitrides. United States: N. p., 2008.
Web.
Waldrip, Karen E, Tsao, Jeffrey Y, & Kerley, Thomas M. Molten-Salt-Based Growth of Group III Nitrides. United States.
Waldrip, Karen E, Tsao, Jeffrey Y, and Kerley, Thomas M. Tue .
"Molten-Salt-Based Growth of Group III Nitrides". United States. https://www.osti.gov/servlets/purl/953743.
@article{osti_953743,
title = {Molten-Salt-Based Growth of Group III Nitrides},
author = {Waldrip, Karen E and Tsao, Jeffrey Y and Kerley, Thomas M},
abstractNote = {A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {10}
}
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