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Title: Molten-Salt-Based Growth of Group III Nitrides

Abstract

A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.

Inventors:
 [1];  [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
953743
Patent Number(s):
7435297
Application Number:
11/102,357
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Waldrip, Karen E, Tsao, Jeffrey Y, and Kerley, Thomas M. Molten-Salt-Based Growth of Group III Nitrides. United States: N. p., 2008. Web.
Waldrip, Karen E, Tsao, Jeffrey Y, & Kerley, Thomas M. Molten-Salt-Based Growth of Group III Nitrides. United States.
Waldrip, Karen E, Tsao, Jeffrey Y, and Kerley, Thomas M. Tue . "Molten-Salt-Based Growth of Group III Nitrides". United States. https://www.osti.gov/servlets/purl/953743.
@article{osti_953743,
title = {Molten-Salt-Based Growth of Group III Nitrides},
author = {Waldrip, Karen E and Tsao, Jeffrey Y and Kerley, Thomas M},
abstractNote = {A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {10}
}

Works referenced in this record:

Preparation and characterizations of bulk GaN crystals
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Electrochemical formation of iron nitride film in a molten LiClKClLi3N system
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High pressure growth of bulk GaN from solutions in gallium
journal, July 2001


Electrochemical surface nitriding of titanium in molten salt system
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Crystal growth of gallium nitride in supercritical ammonia
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Dissolution and formation of nuclear materials in molten media
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Liquid phase electroepitaxy of III–V semiconductors
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Electrochemical Synthesis of Ceramic Materials. 5. An Electrochemical Method Suitable for the Preparation of Nine Metal Nitrides
journal, January 1997


Electrochemical Properties of Li[sub 3]N Dissolved in Molten LiCl at 900 K
journal, January 2001


Electrochemical growth of crystals from electrolyte solutions
journal, July 1976


Electrochemical reduction of nitrogen gas in a molten chloride system
journal, July 1998


GaN single crystal growth from a Na-Ga melt
journal, January 2000