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Title: Method for Improving Mg Doping During Group-III Nitride MOCVD

Abstract

A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
953733
Patent Number(s):
7449404
Application Number:
11/115,685
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Creighton, J Randall, and Wang, George T. Method for Improving Mg Doping During Group-III Nitride MOCVD. United States: N. p., 2008. Web.
Creighton, J Randall, & Wang, George T. Method for Improving Mg Doping During Group-III Nitride MOCVD. United States.
Creighton, J Randall, and Wang, George T. Tue . "Method for Improving Mg Doping During Group-III Nitride MOCVD". United States. https://www.osti.gov/servlets/purl/953733.
@article{osti_953733,
title = {Method for Improving Mg Doping During Group-III Nitride MOCVD},
author = {Creighton, J Randall and Wang, George T},
abstractNote = {A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {11}
}

Works referenced in this record:

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition
journal, December 1994


Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy
journal, December 1997


Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
journal, January 2003


Complex Formation between Magnesocene (MgCp 2 ) and NH 3 :  Implications for p-Type Doping of Group III Nitrides and the Mg Memory Effect
journal, June 2004


Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor
journal, January 1997