Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities

Harrison, Neil; Singleton, John; Migliori, Albert

Title: Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities

Abstract

A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wave vector of the DW material; and structure for applying an external spatially periodic electrostatic potential over the dielectric layer.

Inventors:

Harrison, Neil ^[1]; Singleton, John ^[2]; Migliori, Albert ^[1]

Santa Fe, NM
Los Alamos, NM

Issue Date:: 2008-08-05

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 943337

Patent Number(s):: 7408235

Application Number:: 10/887,153

Assignee:: Los Alamos National Security, LLC (Los Alamos, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/66984 - {Devices using spin polarized carriers}
H01L29/158 - {Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]}
H01L29/24 - including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L45/005 - {Charge density wave transport devices}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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DOE Contract Number:: W-7405-ENG-36

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Harrison, Neil, Singleton, John, and Migliori, Albert. Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities.  United States: N. p., 2008. 
        Web.

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                    Harrison, Neil, Singleton, John, & Migliori, Albert. Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities.  United States.

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                    Harrison, Neil, Singleton, John, and Migliori, Albert. Tue .  
        "Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities".  United States.  https://www.osti.gov/servlets/purl/943337.

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@article{osti_943337,

  title        = {Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities},

  author       = {Harrison, Neil and Singleton, John and Migliori, Albert},

  abstractNote = {A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wave vector of the DW material; and structure for applying an external spatially periodic electrostatic potential over the dielectric layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2008},

  month        = {8}

}

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Works referenced in this record:

Field modulation effects on charge-density-wave conduction in NbSe3
journal, July 2000

Kurita, Ryo; Koyano, Mikio; Katayama, Shin'ichi
Physica B: Condensed Matter, Vol. 284-288
https://doi.org/10.1016/S0921-4526(99)02826-4

Charge‐Density‐Wave Conductors
journal, May 1996

Thorne, Robert E.
Physics Today, Vol. 49, Issue 5
https://doi.org/10.1063/1.881498

Field-Effect Modulation of Charge-Density-Wave Transport in ${NbSe}_{3}$ and ${TaS}_{3}$
journal, June 1995

Adelman, T. L.; Zaitsev-Zotov, S. V.; Thorne, R. E.
Physical Review Letters, Vol. 74, Issue 26
https://doi.org/10.1103/PhysRevLett.74.5264

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Similar Records

Title: Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities

Abstract

Citation Formats

Field modulation effects on charge-density-wave conduction in NbSe3 journal, July 2000

Charge‐Density‐Wave Conductors journal, May 1996

Field-Effect Modulation of Charge-Density-Wave Transport in NbSe 3 and TaS 3 journal, June 1995

Field modulation effects on charge-density-wave conduction in NbSe3
journal, July 2000

Charge‐Density‐Wave Conductors
journal, May 1996

Field-Effect Modulation of Charge-Density-Wave Transport in ${NbSe}_{3}$ and ${TaS}_{3}$
journal, June 1995