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Title: Terahertz radiation mixer

Abstract

A terahertz radiation mixer comprises a heterodyned field-effect transistor (FET) having a high electron mobility heterostructure that provides a gatable two-dimensional electron gas in the channel region of the FET. The mixer can operate in either a broadband pinch-off mode or a narrowband resonant plasmon mode by changing a grating gate bias of the FET. The mixer can beat an RF signal frequency against a local oscillator frequency to generate an intermediate frequency difference signal in the microwave region. The mixer can have a low local oscillator power requirement and a large intermediate frequency bandwidth. The terahertz radiation mixer is particularly useful for terahertz applications requiring high resolution.

Inventors:
 [1];  [2];  [1]
  1. Albuquerque, NM
  2. Santa Barbara, CA
Issue Date:
Research Org.:
Sandia National Laboratories (SNL-NM), Albuquerque, NM
Sponsoring Org.:
USDOE
OSTI Identifier:
941124
Patent Number(s):
7,376,403
Application Number:
11/113,635
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Wanke, Michael C, Allen, S James, and Lee, Mark. Terahertz radiation mixer. United States: N. p., 2008. Web.
Wanke, Michael C, Allen, S James, & Lee, Mark. Terahertz radiation mixer. United States.
Wanke, Michael C, Allen, S James, and Lee, Mark. Tue . "Terahertz radiation mixer". United States. https://www.osti.gov/servlets/purl/941124.
@article{osti_941124,
title = {Terahertz radiation mixer},
author = {Wanke, Michael C and Allen, S James and Lee, Mark},
abstractNote = {A terahertz radiation mixer comprises a heterodyned field-effect transistor (FET) having a high electron mobility heterostructure that provides a gatable two-dimensional electron gas in the channel region of the FET. The mixer can operate in either a broadband pinch-off mode or a narrowband resonant plasmon mode by changing a grating gate bias of the FET. The mixer can beat an RF signal frequency against a local oscillator frequency to generate an intermediate frequency difference signal in the microwave region. The mixer can have a low local oscillator power requirement and a large intermediate frequency bandwidth. The terahertz radiation mixer is particularly useful for terahertz applications requiring high resolution.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {5}
}

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