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Title: Method for fabricating reticles for EUV lithography without the use of a patterned absorber

Abstract

Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages of (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.

Inventors:
 [1];  [2];  [3]
  1. Los Altos, CA
  2. San Ramon, CA
  3. Sunol, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
921903
Patent Number(s):
6,635,391
Application Number:
09/752,887
Assignee:
The Regents of the University of California (Oakland, CA) OAK
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Stearns, Daniel G, Sweeney, Donald W, and Mirkarimi, Paul B. Method for fabricating reticles for EUV lithography without the use of a patterned absorber. United States: N. p., 2003. Web.
Stearns, Daniel G, Sweeney, Donald W, & Mirkarimi, Paul B. Method for fabricating reticles for EUV lithography without the use of a patterned absorber. United States.
Stearns, Daniel G, Sweeney, Donald W, and Mirkarimi, Paul B. Tue . "Method for fabricating reticles for EUV lithography without the use of a patterned absorber". United States. https://www.osti.gov/servlets/purl/921903.
@article{osti_921903,
title = {Method for fabricating reticles for EUV lithography without the use of a patterned absorber},
author = {Stearns, Daniel G and Sweeney, Donald W and Mirkarimi, Paul B},
abstractNote = {Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages of (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {10}
}

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