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Title: Method of produce ultra-low friction carbon films

Abstract

A method and article of manufacture of amorphous diamond-like carbon. The method involves providing a substrate in a chamber, providing a mixture of a carbon containing gas and hydrogen gas with the mixture adjusted such that the atomic molar ratio of carbon to hydrogen is less than 0.3, including all carbon atoms and all hydrogen atoms in the mixture. A plasma is formed of the mixture and the amorphous diamond-like carbon film is deposited on the substrate. To achieve optimum bonding an intervening bonding layer, such as Si or SiO.sub.2, can be formed from SiH.sub.4 with or without oxidation of the layer formed.

Inventors:
 [1];  [2];  [3];  [4]
  1. Naperville, IL
  2. Downers Grove, IL
  3. Istanbul, TK
  4. Lemont, IL
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
921345
Patent Number(s):
6548173
Application Number:
09/808,632
Assignee:
Argonne National Laboratory (Argonne, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Erdemir, Ali, Fenske, George R, Eryilmaz, Osman Levent, and Lee, Richard H. Method of produce ultra-low friction carbon films. United States: N. p., 2003. Web.
Erdemir, Ali, Fenske, George R, Eryilmaz, Osman Levent, & Lee, Richard H. Method of produce ultra-low friction carbon films. United States.
Erdemir, Ali, Fenske, George R, Eryilmaz, Osman Levent, and Lee, Richard H. Tue . "Method of produce ultra-low friction carbon films". United States. https://www.osti.gov/servlets/purl/921345.
@article{osti_921345,
title = {Method of produce ultra-low friction carbon films},
author = {Erdemir, Ali and Fenske, George R and Eryilmaz, Osman Levent and Lee, Richard H},
abstractNote = {A method and article of manufacture of amorphous diamond-like carbon. The method involves providing a substrate in a chamber, providing a mixture of a carbon containing gas and hydrogen gas with the mixture adjusted such that the atomic molar ratio of carbon to hydrogen is less than 0.3, including all carbon atoms and all hydrogen atoms in the mixture. A plasma is formed of the mixture and the amorphous diamond-like carbon film is deposited on the substrate. To achieve optimum bonding an intervening bonding layer, such as Si or SiO.sub.2, can be formed from SiH.sub.4 with or without oxidation of the layer formed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {4}
}

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Works referenced in this record:

Processing and characterisation of diamondlike carbon films
journal, January 1997


Effect of source gas and deposition method on friction and wear performance of diamondlike carbon films
journal, October 1997


The effect of TiN interlayers on the indentation behavior of diamond-like carbon films on alloy and compound substrates
journal, March 1994


Interpretation of Raman spectra of disordered and amorphous carbon
journal, May 2000