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Title: Ion photon emission microscope

Abstract

An ion beam analysis system that creates microscopic multidimensional image maps of the effects of high energy ions from an unfocussed source upon a sample by correlating the exact entry point of an ion into a sample by projection imaging of the ion-induced photons emitted at that point with a signal from a detector that measures the interaction of that ion within the sample. The emitted photons are collected in the lens system of a conventional optical microscope, and projected on the image plane of a high resolution single photon position sensitive detector. Position signals from this photon detector are then correlated in time with electrical effects, including the malfunction of digital circuits, detected within the sample that were caused by the individual ion that created these photons initially.

Inventors:
 [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
921316
Patent Number(s):
6552338
Application Number:
09/882,400
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Doyle, Barney L. Ion photon emission microscope. United States: N. p., 2003. Web.
Doyle, Barney L. Ion photon emission microscope. United States.
Doyle, Barney L. Tue . "Ion photon emission microscope". United States. https://www.osti.gov/servlets/purl/921316.
@article{osti_921316,
title = {Ion photon emission microscope},
author = {Doyle, Barney L},
abstractNote = {An ion beam analysis system that creates microscopic multidimensional image maps of the effects of high energy ions from an unfocussed source upon a sample by correlating the exact entry point of an ion into a sample by projection imaging of the ion-induced photons emitted at that point with a signal from a detector that measures the interaction of that ion within the sample. The emitted photons are collected in the lens system of a conventional optical microscope, and projected on the image plane of a high resolution single photon position sensitive detector. Position signals from this photon detector are then correlated in time with electrical effects, including the malfunction of digital circuits, detected within the sample that were caused by the individual ion that created these photons initially.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {4}
}

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Works referenced in this record:

A new approach to nuclear microscopy: the ion–electron emission microscope
journal, September 1999


High‐resolution imaging with a two‐dimensional resistive anode photon counter
journal, May 1982