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Title: Multi-junction solar cell device

Abstract

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

Inventors:
 [1];  [2]
  1. Lakewood, CO
  2. Wheat Ridge, CO
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
921055
Patent Number(s):
7309832
Application Number:
10/497,119
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Friedman, Daniel J, and Geisz, John F. Multi-junction solar cell device. United States: N. p., 2007. Web.
Friedman, Daniel J, & Geisz, John F. Multi-junction solar cell device. United States.
Friedman, Daniel J, and Geisz, John F. Tue . "Multi-junction solar cell device". United States. https://www.osti.gov/servlets/purl/921055.
@article{osti_921055,
title = {Multi-junction solar cell device},
author = {Friedman, Daniel J and Geisz, John F},
abstractNote = {A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {12}
}

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Works referenced in this record:

BGaInAs solar cells lattice-matched to GaAs
conference, January 2000

  • Geisz, J. F.; Friedman, D. J.; Kurtz, S.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
  • https://doi.org/10.1109/PVSC.2000.916052

GaNPAs solar cells lattice-matched to GaP
conference, January 2002

  • Geisz, J. F.; Friedman, D. J.; Kurtz, S.
  • Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.
  • https://doi.org/10.1109/PVSC.2002.1190716

Epitaxial growth of BGaAs and BGaInAs by MOCVD
journal, May 2001


III N V semiconductors for solar photovoltaic applications
journal, July 2002