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Title: Method and apparatus for forming conformal SiN.sub.x films

Abstract

A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.

Inventors:
 [1]
  1. Littleton, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
920890
Patent Number(s):
7300890
Application Number:
10/621,712
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Wang, Qi. Method and apparatus for forming conformal SiN.sub.x films. United States: N. p., 2007. Web.
Wang, Qi. Method and apparatus for forming conformal SiN.sub.x films. United States.
Wang, Qi. Tue . "Method and apparatus for forming conformal SiN.sub.x films". United States. https://www.osti.gov/servlets/purl/920890.
@article{osti_920890,
title = {Method and apparatus for forming conformal SiN.sub.x films},
author = {Wang, Qi},
abstractNote = {A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {11}
}

Patent:

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