DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Preparation of CIGS-based solar cells using a buffered electrodeposition bath

Abstract

A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Inventors:
 [1]
  1. Littleton, CO
Issue Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
920028
Patent Number(s):
7297868
Application Number:
10/627,322
Assignee:
Davis, Joseph & Negley (Mill Valley, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Bhattacharya, Raghu Nath. Preparation of CIGS-based solar cells using a buffered electrodeposition bath. United States: N. p., 2007. Web.
Bhattacharya, Raghu Nath. Preparation of CIGS-based solar cells using a buffered electrodeposition bath. United States.
Bhattacharya, Raghu Nath. Tue . "Preparation of CIGS-based solar cells using a buffered electrodeposition bath". United States. https://www.osti.gov/servlets/purl/920028.
@article{osti_920028,
title = {Preparation of CIGS-based solar cells using a buffered electrodeposition bath},
author = {Bhattacharya, Raghu Nath},
abstractNote = {A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {11}
}

Works referenced in this record:

Electrodeposition of CuInS2 from aqueous solution (II) electrodeposition of CuInS2 film
journal, September 1996


Amine-quinone polyurethanes as binders for metal particle tape
journal, November 1993