Conductive layer for biaxially oriented semiconductor film growth
Abstract
A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.
- Inventors:
-
- Los Alamos, NM
- Santa Fe, NM
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 919057
- Patent Number(s):
- 7288332
- Application Number:
- 11/245,721
- Assignee:
- Los Almos National Security, LLC (Los Almos, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C03 - GLASS C03C - CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Findikoglu, Alp T, and Matias, Vladimir. Conductive layer for biaxially oriented semiconductor film growth. United States: N. p., 2007.
Web.
Findikoglu, Alp T, & Matias, Vladimir. Conductive layer for biaxially oriented semiconductor film growth. United States.
Findikoglu, Alp T, and Matias, Vladimir. Tue .
"Conductive layer for biaxially oriented semiconductor film growth". United States. https://www.osti.gov/servlets/purl/919057.
@article{osti_919057,
title = {Conductive layer for biaxially oriented semiconductor film growth},
author = {Findikoglu, Alp T and Matias, Vladimir},
abstractNote = {A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 30 00:00:00 EDT 2007},
month = {Tue Oct 30 00:00:00 EDT 2007}
}
Works referenced in this record:
Thin biaxially textured TiN films on amorphous substrates prepared by ion-beam assisted pulsed laser deposition
journal, October 2004
- Hühne, R.; Fähler, S.; Holzapfel, B.
- Applied Physics Letters, Vol. 85, Issue 14