skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Conductive layer for biaxially oriented semiconductor film growth

Abstract

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

Inventors:
 [1];  [2]
  1. Los Alamos, NM
  2. Santa Fe, NM
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
919057
Patent Number(s):
7288332
Application Number:
11/245,721
Assignee:
Los Almos National Security, LLC (Los Almos, NM)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Findikoglu, Alp T, and Matias, Vladimir. Conductive layer for biaxially oriented semiconductor film growth. United States: N. p., 2007. Web.
Findikoglu, Alp T, & Matias, Vladimir. Conductive layer for biaxially oriented semiconductor film growth. United States.
Findikoglu, Alp T, and Matias, Vladimir. Tue . "Conductive layer for biaxially oriented semiconductor film growth". United States. https://www.osti.gov/servlets/purl/919057.
@article{osti_919057,
title = {Conductive layer for biaxially oriented semiconductor film growth},
author = {Findikoglu, Alp T and Matias, Vladimir},
abstractNote = {A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {10}
}

Patent:

Save / Share:

Works referenced in this record:

Thin biaxially textured TiN films on amorphous substrates prepared by ion-beam assisted pulsed laser deposition
journal, October 2004