High-voltage compatible, full-depleted CCD

Holland, Stephen Edward

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Title: High-voltage compatible, full-depleted CCD

Abstract

A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

Inventors:

Holland, Stephen Edward ^[1]

Hercules, CA

Issue Date:: Tue Sep 18 00:00:00 EDT 2007

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 915229

Patent Number(s):: 7271468

Application Number:: 11/357,769

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/1463 - {Pixel isolation structures}
H01L27/14806 - {Structural or functional details thereof}
H01L27/14812 - {Special geometry or disposition of pixel-elements, address lines or gate-electrodes}

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DOE Contract Number:: AC03-76SF00098; AC02-05CH11231

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

Citation Formats


                    Holland, Stephen Edward. High-voltage compatible, full-depleted CCD.  United States: N. p., 2007. 
        Web.

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                    Holland, Stephen Edward. High-voltage compatible, full-depleted CCD.  United States.

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                    Holland, Stephen Edward. Tue .  
        "High-voltage compatible, full-depleted CCD".  United States.  https://www.osti.gov/servlets/purl/915229.

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@article{osti_915229,

  title        = {High-voltage compatible, full-depleted CCD},

  author       = {Holland, Stephen Edward},

  abstractNote = {A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Sep 18 00:00:00 EDT 2007},

  month        = {Tue Sep 18 00:00:00 EDT 2007}

}

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Works referenced in this record:

Strip detector design for ATLAS and HERA-B using two-dimensional device simulation
journal, August 1996

Richter, R. H.; Andricek, L.; Gebhart, T.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 377, Issue 2-3, p. 412-421
https://doi.org/10.1016/0168-9002(96)00257-4

Integrated x-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon-sensitive region
conference, January 2003

Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred
International Symposium on Optical Science and Technology, SPIE Proceedings
https://doi.org/10.1117/12.450826

An Overview of CCD Development at Lawrence Berkeley National Laboratory
journal, January 2002

Holland, Steve
Experimental Astronomy, Vol. 14, Issue 2
https://doi.org/10.1023/B:EXPA.0000004341.11906.bf

Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors
journal, March 1979

Rusu, A.; Bulucea, C.
IEEE Transactions on Electron Devices, Vol. 26, Issue 3
https://doi.org/10.1109/T-ED.1979.19404

Effect of floating-body charge on SOI MOSFET design
journal, January 1998

Wei, A.; Sherony, M. J.; Antoniadis, D. A.
IEEE Transactions on Electron Devices, Vol. 45, Issue 2
https://doi.org/10.1109/16.658677

Field-effect transistor versus analog transistor (static induction transistor)
journal, April 1975

Nishizawa, J.; Terasaki, T.; Shibata, J.
IEEE Transactions on Electron Devices, Vol. 22, Issue 4
https://doi.org/10.1109/T-ED.1975.18103

CCD soft-X-ray detectors with improved high- and low-energy performance
journal, October 2004

Burke, B. E.; Gr, J. A.; Loomis, A. H.
IEEE Transactions on Nuclear Science, Vol. 51, Issue 5
https://doi.org/10.1109/TNS.2004.835901

A proposed VLSI pixel device for particle detection
journal, March 1989

Parker, Sherwood
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 275, Issue 3
https://doi.org/10.1016/0168-9002(89)90736-5

An Overview of CCD Development at Lawrence Berkeley National Laboratory
book, January 2004

Holland, Steve
Scientific Detectors for Astronomy
https://doi.org/10.1007/1-4020-2527-0_10

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon
journal, January 2003

Holland, S. E.; Groom, D. E.; Palaio, N. P.
IEEE Transactions on Electron Devices, Vol. 50, Issue 1
https://doi.org/10.1109/TED.2002.806476

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Similar Records

Title: High-voltage compatible, full-depleted CCD

Abstract

Citation Formats

Strip detector design for ATLAS and HERA-B using two-dimensional device simulation journal, August 1996

Integrated x-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon-sensitive region conference, January 2003

An Overview of CCD Development at Lawrence Berkeley National Laboratory journal, January 2002

Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors journal, March 1979

Effect of floating-body charge on SOI MOSFET design journal, January 1998

Field-effect transistor versus analog transistor (static induction transistor) journal, April 1975

CCD soft-X-ray detectors with improved high- and low-energy performance journal, October 2004

A proposed VLSI pixel device for particle detection journal, March 1989

An Overview of CCD Development at Lawrence Berkeley National Laboratory book, January 2004

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon journal, January 2003

Strip detector design for ATLAS and HERA-B using two-dimensional device simulation
journal, August 1996

Integrated x-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon-sensitive region
conference, January 2003

An Overview of CCD Development at Lawrence Berkeley National Laboratory
journal, January 2002

Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors
journal, March 1979

Effect of floating-body charge on SOI MOSFET design
journal, January 1998

Field-effect transistor versus analog transistor (static induction transistor)
journal, April 1975

CCD soft-X-ray detectors with improved high- and low-energy performance
journal, October 2004

A proposed VLSI pixel device for particle detection
journal, March 1989

An Overview of CCD Development at Lawrence Berkeley National Laboratory
book, January 2004

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon
journal, January 2003