skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High-voltage compatible, full-depleted CCD

Abstract

A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

Inventors:
 [1]
  1. Hercules, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
915229
Patent Number(s):
7271468
Application Number:
11/357,769
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC03-76SF00098; AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Holland, Stephen Edward. High-voltage compatible, full-depleted CCD. United States: N. p., 2007. Web.
Holland, Stephen Edward. High-voltage compatible, full-depleted CCD. United States.
Holland, Stephen Edward. Tue . "High-voltage compatible, full-depleted CCD". United States. https://www.osti.gov/servlets/purl/915229.
@article{osti_915229,
title = {High-voltage compatible, full-depleted CCD},
author = {Holland, Stephen Edward},
abstractNote = {A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {9}
}

Patent:

Save / Share:

Works referenced in this record:

Strip detector design for ATLAS and HERA-B using two-dimensional device simulation
journal, August 1996

  • Richter, R. H.; Andricek, L.; Gebhart, T.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 377, Issue 2-3, p. 412-421
  • https://doi.org/10.1016/0168-9002(96)00257-4

Integrated x-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon-sensitive region
conference, January 2003


An Overview of CCD Development at Lawrence Berkeley National Laboratory
journal, January 2002


Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors
journal, March 1979


Effect of floating-body charge on SOI MOSFET design
journal, January 1998


Field-effect transistor versus analog transistor (static induction transistor)
journal, April 1975


CCD soft-X-ray detectors with improved high- and low-energy performance
journal, October 2004


A proposed VLSI pixel device for particle detection
journal, March 1989


Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon
journal, January 2003