skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for fabricating hafnia films

Abstract

The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogeneous hafnium ionic complexes and hafnium nanoclusters wherein the aqueous solution is capable of undergoing homogeneous precipitation under controlled conditions for a desired period of time at a controlled temperature and controlled solution acidity for desired nanocluster nucleation and growth kinetics, desired nanocluster size, desired growth rate of film thickness and desired film surface characteristics. The method further comprising forming the self-assembled monolayer on the surface of the substrate wherein the self-assembled monolayer comprises a plurality of hydrocarbon chains cross-linked together along the surface of the substrate, the hydrocarbon chains being uniformly spaced from one another and wherein each of the hydrocarbon chains having a functional anchoring group at a first end of the chain covalently bonded with the surface of the substrate and each of the hydrocarbon chains having a functional terminating group projected away from the surface wherein the functional terminating group provides a bonding site for the hafnium film to grow; and exposing the substrate to the aqueous solution formore » a desired period of time at a controlled temperature wherein the hafnium ionic complexes and the hafnium nanoclusters are deposited on the bonding site of the functional terminating group thereby forming the hafnia film wherein the hafnium bonded to the hydrocarbons and to one another provide a uniform ordered arrangement defined by the uniform arrangement of the hydrocarbons.« less

Inventors:
 [1]
  1. Knoxville, TN
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
913434
Patent Number(s):
7258745
Application Number:
10/913,896
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hu, Michael Z. Method for fabricating hafnia films. United States: N. p., 2007. Web.
Hu, Michael Z. Method for fabricating hafnia films. United States.
Hu, Michael Z. Tue . "Method for fabricating hafnia films". United States. https://www.osti.gov/servlets/purl/913434.
@article{osti_913434,
title = {Method for fabricating hafnia films},
author = {Hu, Michael Z},
abstractNote = {The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogeneous hafnium ionic complexes and hafnium nanoclusters wherein the aqueous solution is capable of undergoing homogeneous precipitation under controlled conditions for a desired period of time at a controlled temperature and controlled solution acidity for desired nanocluster nucleation and growth kinetics, desired nanocluster size, desired growth rate of film thickness and desired film surface characteristics. The method further comprising forming the self-assembled monolayer on the surface of the substrate wherein the self-assembled monolayer comprises a plurality of hydrocarbon chains cross-linked together along the surface of the substrate, the hydrocarbon chains being uniformly spaced from one another and wherein each of the hydrocarbon chains having a functional anchoring group at a first end of the chain covalently bonded with the surface of the substrate and each of the hydrocarbon chains having a functional terminating group projected away from the surface wherein the functional terminating group provides a bonding site for the hafnium film to grow; and exposing the substrate to the aqueous solution for a desired period of time at a controlled temperature wherein the hafnium ionic complexes and the hafnium nanoclusters are deposited on the bonding site of the functional terminating group thereby forming the hafnia film wherein the hafnium bonded to the hydrocarbons and to one another provide a uniform ordered arrangement defined by the uniform arrangement of the hydrocarbons.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {8}
}

Patent:

Save / Share:

Works referenced in this record:

Titanium Oxide Thin Films on Organic Interfaces through Biomimetic Processing
journal, February 1998


Self-assembled monolayers: Recent developments and applications
journal, February 1996


Characterization of hafnium anodic oxide films: An AC impedance investigation
journal, May 1995


Golden interfaces: The Surface of Self-Assembled Monolayers
journal, September 1996


Preparation of TiO2 films on self-assembled monolayers by sol–gel method
journal, March 1998


Characterization of hafnium oxide films modified by Pt doping
journal, November 1995


Tailoring the dielectric properties of HfO 2 –Ta 2 O 5 nanolaminates
journal, June 1996


Formation and Structure of Self-Assembled Monolayers
journal, January 1996


Physical characterization of hafnium oxide thin films and their application as gas sensing devices
journal, November 1998


Deposition of optical coatings by pulsed laser ablation
journal, April 1996


The deposition of TiO 2 thin films on self-assembly monolayers studied by X-ray photoelectron spectroscopy
journal, January 1998


Optical properties of hafnia and coevaporated hafnia:magnesium fluoride thin films
journal, January 1996


Synthesis of ZrO2 and Y2O3-Doped ZrO2 Thin Films Using Self-Assembled Monolayers
journal, December 1997


Ellipsometric investigation of anodic hafnium oxide films
journal, January 1997


Reactive evaporation of low-defect density hafnia
journal, January 1993


Spin‐dependent tunneling in HfO 2 tunnel junctions
journal, October 1996