Method for fabricating hafnia films
Abstract
The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogeneous hafnium ionic complexes and hafnium nanoclusters wherein the aqueous solution is capable of undergoing homogeneous precipitation under controlled conditions for a desired period of time at a controlled temperature and controlled solution acidity for desired nanocluster nucleation and growth kinetics, desired nanocluster size, desired growth rate of film thickness and desired film surface characteristics. The method further comprising forming the self-assembled monolayer on the surface of the substrate wherein the self-assembled monolayer comprises a plurality of hydrocarbon chains cross-linked together along the surface of the substrate, the hydrocarbon chains being uniformly spaced from one another and wherein each of the hydrocarbon chains having a functional anchoring group at a first end of the chain covalently bonded with the surface of the substrate and each of the hydrocarbon chains having a functional terminating group projected away from the surface wherein the functional terminating group provides a bonding site for the hafnium film to grow; and exposing the substrate to the aqueous solution formore »
- Inventors:
-
- Knoxville, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 913434
- Patent Number(s):
- 7258745
- Application Number:
- 10/913,896
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B05 - SPRAYING OR ATOMISING IN GENERAL B05D - PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Hu, Michael Z. Method for fabricating hafnia films. United States: N. p., 2007.
Web.
Hu, Michael Z. Method for fabricating hafnia films. United States.
Hu, Michael Z. Tue .
"Method for fabricating hafnia films". United States. https://www.osti.gov/servlets/purl/913434.
@article{osti_913434,
title = {Method for fabricating hafnia films},
author = {Hu, Michael Z},
abstractNote = {The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogeneous hafnium ionic complexes and hafnium nanoclusters wherein the aqueous solution is capable of undergoing homogeneous precipitation under controlled conditions for a desired period of time at a controlled temperature and controlled solution acidity for desired nanocluster nucleation and growth kinetics, desired nanocluster size, desired growth rate of film thickness and desired film surface characteristics. The method further comprising forming the self-assembled monolayer on the surface of the substrate wherein the self-assembled monolayer comprises a plurality of hydrocarbon chains cross-linked together along the surface of the substrate, the hydrocarbon chains being uniformly spaced from one another and wherein each of the hydrocarbon chains having a functional anchoring group at a first end of the chain covalently bonded with the surface of the substrate and each of the hydrocarbon chains having a functional terminating group projected away from the surface wherein the functional terminating group provides a bonding site for the hafnium film to grow; and exposing the substrate to the aqueous solution for a desired period of time at a controlled temperature wherein the hafnium ionic complexes and the hafnium nanoclusters are deposited on the bonding site of the functional terminating group thereby forming the hafnia film wherein the hafnium bonded to the hydrocarbons and to one another provide a uniform ordered arrangement defined by the uniform arrangement of the hydrocarbons.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 21 00:00:00 EDT 2007},
month = {Tue Aug 21 00:00:00 EDT 2007}
}
Works referenced in this record:
Titanium Oxide Thin Films on Organic Interfaces through Biomimetic Processing
journal, February 1998
- Baskaran, Suresh; Song, Lin; Liu, Jun
- Journal of the American Ceramic Society, Vol. 81, Issue 2
Self-assembled monolayers: Recent developments and applications
journal, February 1996
- Bishop, Adeana R.; Nuzzo, Ralph G.
- Current Opinion in Colloid & Interface Science, Vol. 1, Issue 1
Characterization of hafnium anodic oxide films: An AC impedance investigation
journal, May 1995
- Esplandiu, M. J.; Patrito, E. M.; Macagno, V. A.
- Electrochimica Acta, Vol. 40, Issue 7
Monolayer transformation by nucleophilic substitution: Applications to the creation of new monolayer assemblies
journal, November 1990
- Balachander, Natarajan; Sukenik, Chaim N.
- Langmuir, Vol. 6, Issue 11
Golden interfaces: The Surface of Self-Assembled Monolayers
journal, September 1996
- Delamarche, Emmanuel.; Michel, Bruno.; Biebuyck, Hans A.
- Advanced Materials, Vol. 8, Issue 9
Preparation of TiO2 films on self-assembled monolayers by sol–gel method
journal, March 1998
- Lin, H.; Kozuka, H.; Yoko, T.
- Thin Solid Films, Vol. 315, Issue 1-2
Characterization of hafnium oxide films modified by Pt doping
journal, November 1995
- Esplandiu, M. J.; Avalle, L. B.; Macagno, V. A.
- Electrochimica Acta, Vol. 40, Issue 16
Tailoring the dielectric properties of HfO 2 –Ta 2 O 5 nanolaminates
journal, June 1996
- Kukli, Kaupo; Ihanus, Jarkko; Ritala, Mikko
- Applied Physics Letters, Vol. 68, Issue 26
Deposition mechanism of oxide thin films on self-assembled organic monolayers11Paper presented at Sympos. Synergistic Synthesis of Inororganic Materials, March 1996, Schloß Ringberg, Germany
journal, January 1998
- Shin, H.; Agarwal, M.; De Guire, M. R.
- Acta Materialia, Vol. 46, Issue 3
Formation and Structure of Self-Assembled Monolayers
journal, January 1996
- Ulman, Abraham
- Chemical Reviews, Vol. 96, Issue 4, p. 1533-1554
Physical characterization of hafnium oxide thin films and their application as gas sensing devices
journal, November 1998
- Capone, S.; Leo, G.; Rella, R.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 6
Deposition of optical coatings by pulsed laser ablation
journal, April 1996
- Reisse, Guenter; Weissmantel, Steffen; Keiper, Bernd
- Applied Surface Science, Vol. 96-98
The deposition of TiO 2 thin films on self-assembly monolayers studied by X-ray photoelectron spectroscopy
journal, January 1998
- Xiao, Zhongdang; Gu, Jianhua; Huang, Dan
- Applied Surface Science, Vol. 125, Issue 1
Optical properties of hafnia and coevaporated hafnia:magnesium fluoride thin films
journal, January 1996
- Tsou, Y.; Ho, F. C.
- Applied Optics, Vol. 35, Issue 25
Synthesis of Oxide and Non-oxide Inorganic Materials at Organic Surfaces
book, April 1999
- De Guire, Mark R.; Niesen, Thomas P.; Wolff, Jurand
- Precursor‐Derived Ceramics: Synthesis, Structures and High Temperature Mechanical Properties
Synthesis of ZrO2 and Y2O3-Doped ZrO2 Thin Films Using Self-Assembled Monolayers
journal, December 1997
- Agarwal, Monika; Guire, Mark R.; Heuer, Arthur H.
- Journal of the American Ceramic Society, Vol. 80, Issue 12
Ellipsometric investigation of anodic hafnium oxide films
journal, January 1997
- Esplandiu, M. J.; Patrito, E. M.; Macagno, V. A.
- Electrochimica Acta, Vol. 42, Issue 9
Reactive evaporation of low-defect density hafnia
journal, January 1993
- Chow, Robert; Falabella, Steve; Loomis, Gary E.
- Applied Optics, Vol. 32, Issue 28
Spin‐dependent tunneling in HfO 2 tunnel junctions
journal, October 1996
- Platt, C. L.; Dieny, B.; Berkowitz, A. E.
- Applied Physics Letters, Vol. 69, Issue 15