Title: Wafer bonded virtual substrate and method for forming the same

Abstract

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Inventors:

Atwater, Jr., Harry A. ^[1]; Zahler, James M ^[2]; Morral, Anna Fontcuberta i ^[3]

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+ Show Inventor Affiliations

1. (So. Pasadena, CA)
2. Pasadena, CA
3. Paris, FR

Issue Date:

2007-07-03

Research Org.:

Midwest Research Institute, Kansas City, MO (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

913255

Patent Number(s):

7238622

Application Number:

10/761,918

Assignee:

California Institute of Technology (Pasadena, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02096 - {only mechanical cleaning}
H01L21/187 - {by direct bonding}
H01L21/30604 - {Chemical etching}
H01L21/30612 - {Etching of AIIIBV compounds}
H01L21/30625 - {With simultaneous mechanical treatment, e.g. mechanico-chemical polishing}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/03925 - {including AIIBVI compound materials, e.g. CdTe, CdS}
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S438/933 - Germanium or silicon or Ge-Si on III-V

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DOE Contract Number:  

AC36-99GO10337

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE