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Title: Wafer bonded virtual substrate and method for forming the same

Abstract

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Inventors:
 [1];  [2];  [3]
  1. (So. Pasadena, CA)
  2. Pasadena, CA
  3. Paris, FR
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
913255
Patent Number(s):
7238622
Application Number:
10/761,918
Assignee:
California Institute of Technology (Pasadena, CA)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Atwater, Jr., Harry A., Zahler, James M, and Morral, Anna Fontcuberta i. Wafer bonded virtual substrate and method for forming the same. United States: N. p., 2007. Web.
Atwater, Jr., Harry A., Zahler, James M, & Morral, Anna Fontcuberta i. Wafer bonded virtual substrate and method for forming the same. United States.
Atwater, Jr., Harry A., Zahler, James M, and Morral, Anna Fontcuberta i. Tue . "Wafer bonded virtual substrate and method for forming the same". United States. https://www.osti.gov/servlets/purl/913255.
@article{osti_913255,
title = {Wafer bonded virtual substrate and method for forming the same},
author = {Atwater, Jr., Harry A. and Zahler, James M and Morral, Anna Fontcuberta i},
abstractNote = {A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {7}
}

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Works referenced in this record:

Silicon on insulator material technology
journal, January 1995


Solid‐state reaction‐mediated low‐temperature bonding of GaAs and InP wafers to Si substrates
journal, February 1994


Ge Layer Transfer To Si For Photovoltaic Applications
journal, January 2001


Electrical and Structural Characterization of the Interface of Wafer Bonded InP/Si
journal, January 2003


InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation
journal, December 2003


Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells
conference, January 2002


Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
journal, December 1998


III-V compounds for solar cell applications
journal, June 1999


Fundamental issues in wafer bonding
journal, July 1999


Controlled surface nanopatterning with buried dislocation arrays
journal, November 2003


Integration of Si and SiGe with Al2O3 (sapphire)
journal, November 2001


Smart-Cut: A New Silicon On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding *1
journal, March 1997


Application of hydrogen ion beams to Silicon On Insulator material technology
journal, February 1996


Germanium-on-insulator substrates by wafer bonding
journal, August 2004


Heterogeneous silicon integration by ultra-high vacuum wafer bonding
journal, August 2003


Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
journal, August 2004


Publisher's Note: Donor level of bond-center hydrogen in germanium [Phys. Rev. B 69 , 245207 (2004)]
journal, August 2004


Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure
journal, December 2002


Strained Si on insulator technology: from materials to devices
journal, August 2004


Wafer bonding of silicon wafers covered with various surface layers
journal, October 2000


A “smarter-cut” approach to low temperature silicon layer transfer
journal, January 1998


Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning
journal, October 2001


Hydrophobic silicon wafer bonding
journal, January 1994


Semiconductor Wafer Bonding
journal, August 1998


Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
journal, March 1997


Multi-junction solar cells and novel structures for solar cell applications
journal, April 2002


SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
journal, February 2001


Smart-Cut® technology: from 300 mm ultrathin SOI production to advanced engineered substrates
journal, June 2004


Ge layer transfer to Si for photovoltaic applications
journal, February 2002