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Title: Tailoring nanocrystalline diamond film properties

Abstract

A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.

Inventors:
 [1];  [2];  [3];  [4]
  1. Downers Grove, IL
  2. Somerville, MA
  3. Orlando, FL
  4. Naperville, IL
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
Sponsoring Org.:
USDOE
OSTI Identifier:
912842
Patent Number(s):
6,592,839
Assignee:
The University of Chicago (Chicago, IL) CHO
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gruen, Dieter M, McCauley, Thomas G, Zhou, Dan, and Krauss, Alan R. Tailoring nanocrystalline diamond film properties. United States: N. p., 2003. Web.
Gruen, Dieter M, McCauley, Thomas G, Zhou, Dan, & Krauss, Alan R. Tailoring nanocrystalline diamond film properties. United States.
Gruen, Dieter M, McCauley, Thomas G, Zhou, Dan, and Krauss, Alan R. Tue . "Tailoring nanocrystalline diamond film properties". United States. https://www.osti.gov/servlets/purl/912842.
@article{osti_912842,
title = {Tailoring nanocrystalline diamond film properties},
author = {Gruen, Dieter M and McCauley, Thomas G and Zhou, Dan and Krauss, Alan R},
abstractNote = {A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {7}
}

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