Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate
Abstract
For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.
- Inventors:
-
- Livermore, CA
- (Patterson, CA)
- Cupertino, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 909427
- Patent Number(s):
- 7224041
- Application Number:
- 10/856,175
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, and Wu, Kuang Jen J. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate. United States: N. p., 2007.
Web.
Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, & Wu, Kuang Jen J. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate. United States.
Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, and Wu, Kuang Jen J. Tue .
"Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate". United States. https://www.osti.gov/servlets/purl/909427.
@article{osti_909427,
title = {Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate},
author = {Sherohman, John W and Coombs, III, Arthur W. and Yee, Jick Hong and Wu, Kuang Jen J},
abstractNote = {For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {5}
}
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