Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

Sherohman, John W; Yee, Jick Hong; Wu, Kuang Jen J

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Title: Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

Abstract

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

Inventors:

Sherohman, John W ^[1]; Coombs, III, Arthur W. ^[2]; Yee, Jick Hong ^[1]; Wu, Kuang Jen J ^[3]

Livermore, CA
(Patterson, CA)
Cupertino, CA

Issue Date:: Tue May 29 00:00:00 EDT 2007

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 909427

Patent Number(s):: 7224041

Application Number:: 10/856,175

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02398 - {Antimonides}
H01L21/02466 - {Antimonides}
H01L21/02538 - {Group 13/15 materials}
H01L21/02546 - {Arsenides}
H01L21/02549 - {Antimonides}
H01L21/02551 - {Group 12/16 materials}
H01L21/0256 - {Selenides}
H01L21/02562 - {Tellurides}
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L31/0328 - including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/109 - the potential barrier being of the PN heterojunction type

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, and Wu, Kuang Jen J. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate.  United States: N. p., 2007. 
        Web.

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                    Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, & Wu, Kuang Jen J. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate.  United States.

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                    Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, and Wu, Kuang Jen J. Tue .  
        "Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate".  United States.  https://www.osti.gov/servlets/purl/909427.

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@article{osti_909427,

  title        = {Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate},

  author       = {Sherohman, John W and Coombs, III, Arthur W. and Yee, Jick Hong and Wu, Kuang Jen J},

  abstractNote = {For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue May 29 00:00:00 EDT 2007},

  month        = {Tue May 29 00:00:00 EDT 2007}

}

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Works referenced in this record:

Antimony-based quaternary alloys for high-speed low-power electronic devices
conference, January 2002

Magno, R.; Bennett, B. R.; Ikossi, K.
IEEE Lester Eastmann Biennial Conference, Proceedings. IEEE Lester Eastman Conference on High Performance Devices
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Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics
conference, January 2003

Tsai, R.; Barsky, M.; Boos, J. B.
GaAs IC Symposium. 25th Annual Technical Digest 2003, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003.
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InAs/InAsP composite channels for antimonide-based field-effect transistors
journal, January 2004

Lin, H. -K.; Kadow, C.; Dahlström, M.
Applied Physics Letters, Vol. 84, Issue 3
https://doi.org/10.1063/1.1642275

Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
journal, January 2000

Bennett, B. R.; Bracker, A. S.; Magno, R.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 3
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Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) [for MOBILE logic circuits]
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McMorrow, D.; Magno, R.; Bracker, A. S.
IEEE Transactions on Nuclear Science, Vol. 48, Issue 6
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Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks
journal, October 2002

Triplett, G.; May, G.; Brown, A.
Solid-State Electronics, Vol. 46, Issue 10
https://doi.org/10.1016/S0038-1101(02)00098-9

RF and DC characteristics of low-leakage InAs/AlSb HFETs
conference, January 2002

Brar, B.; Nagy, G.; Bergman, J.
IEEE Lester Eastmann Biennial Conference, Proceedings. IEEE Lester Eastman Conference on High Performance Devices
https://doi.org/10.1109/LECHPD.2002.1146781

Bilayer growth period oscillation of the Sb2 reactivity during molecular beam epitaxy of AlSb (001)
journal, December 1997

Kaspi, Ron; Loehr, John P.
Applied Physics Letters, Vol. 71, Issue 24
https://doi.org/10.1063/1.120383

MBE of wide bandgap II–VI compounds
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Gunshor, R. L.; Kobayashi, M.; Kolodziejski, L. A.
Journal of Crystal Growth, Vol. 99, Issue 1-4
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Stoichiometry-induced roughness on antimonide growth surfaces
journal, April 2001

Bracker, A. S.; Nosho, B. Z.; Barvosa-Carter, W.
Applied Physics Letters, Vol. 78, Issue 17
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Bias and Temperature Dependence of Sb-Based Heterostructure Millimeter-Wave Detectors With Improved Sensitivity
journal, January 2004

Meyers, R. G.; Fay, P.; Schulman, J. N.
IEEE Electron Device Letters, Vol. 25, Issue 1
https://doi.org/10.1109/LED.2003.821601

Sb-heterostructure interband backward diodes
journal, July 2000

Schulman, J. N.; Chow, D. H.
IEEE Electron Device Letters, Vol. 21, Issue 7
https://doi.org/10.1109/55.847378

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Similar Records

Title: Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

Abstract

Citation Formats

Antimony-based quaternary alloys for high-speed low-power electronic devices conference, January 2002

Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics conference, January 2003

InAs/InAsP composite channels for antimonide-based field-effect transistors journal, January 2004

Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system journal, January 2000

Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) [for MOBILE logic circuits] journal, January 2001

Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks journal, October 2002

RF and DC characteristics of low-leakage InAs/AlSb HFETs conference, January 2002

Bilayer growth period oscillation of the Sb2 reactivity during molecular beam epitaxy of AlSb (001) journal, December 1997

MBE of wide bandgap II–VI compounds journal, January 1990

Stoichiometry-induced roughness on antimonide growth surfaces journal, April 2001

Bias and Temperature Dependence of Sb-Based Heterostructure Millimeter-Wave Detectors With Improved Sensitivity journal, January 2004

Sb-heterostructure interband backward diodes journal, July 2000

Antimony-based quaternary alloys for high-speed low-power electronic devices
conference, January 2002

Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics
conference, January 2003

InAs/InAsP composite channels for antimonide-based field-effect transistors
journal, January 2004

Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
journal, January 2000

Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) [for MOBILE logic circuits]
journal, January 2001

Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks
journal, October 2002

RF and DC characteristics of low-leakage InAs/AlSb HFETs
conference, January 2002

Bilayer growth period oscillation of the Sb2 reactivity during molecular beam epitaxy of AlSb (001)
journal, December 1997

MBE of wide bandgap II–VI compounds
journal, January 1990

Stoichiometry-induced roughness on antimonide growth surfaces
journal, April 2001

Bias and Temperature Dependence of Sb-Based Heterostructure Millimeter-Wave Detectors With Improved Sensitivity
journal, January 2004

Sb-heterostructure interband backward diodes
journal, July 2000