skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

Abstract

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

Inventors:
 [1];  [2];  [1];  [3]
  1. Livermore, CA
  2. (Patterson, CA)
  3. Cupertino, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
909427
Patent Number(s):
7224041
Application Number:
10/856,175
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, and Wu, Kuang Jen J. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate. United States: N. p., 2007. Web.
Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, & Wu, Kuang Jen J. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate. United States.
Sherohman, John W, Coombs, III, Arthur W., Yee, Jick Hong, and Wu, Kuang Jen J. Tue . "Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate". United States. https://www.osti.gov/servlets/purl/909427.
@article{osti_909427,
title = {Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate},
author = {Sherohman, John W and Coombs, III, Arthur W. and Yee, Jick Hong and Wu, Kuang Jen J},
abstractNote = {For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {5}
}

Patent:

Save / Share:

Works referenced in this record:

Antimony-based quaternary alloys for high-speed low-power electronic devices
conference, January 2002


Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics
conference, January 2003

  • Tsai, R.; Barsky, M.; Boos, J. B.
  • GaAs IC Symposium. 25th Annual Technical Digest 2003, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003.
  • https://doi.org/10.1109/GAAS.2003.1252415

InAs/InAsP composite channels for antimonide-based field-effect transistors
journal, January 2004


Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
journal, January 2000

  • Bennett, B. R.; Bracker, A. S.; Magno, R.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 3
  • https://doi.org/10.1116/1.591482

Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) [for MOBILE logic circuits]
journal, January 2001


Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks
journal, October 2002


RF and DC characteristics of low-leakage InAs/AlSb HFETs
conference, January 2002


Bilayer growth period oscillation of the Sb2 reactivity during molecular beam epitaxy of AlSb (001)
journal, December 1997


MBE of wide bandgap II–VI compounds
journal, January 1990


Stoichiometry-induced roughness on antimonide growth surfaces
journal, April 2001


Bias and Temperature Dependence of Sb-Based Heterostructure Millimeter-Wave Detectors With Improved Sensitivity
journal, January 2004


Sb-heterostructure interband backward diodes
journal, July 2000