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Title: Low temperature production of large-grain polycrystalline semiconductors

Abstract

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Inventors:
 [1];  [2]
  1. Fayetteville, AR
  2. Loudonville, NY
Issue Date:
Research Org.:
DOE/EPSCOR
Sponsoring Org.:
USDOE
OSTI Identifier:
908831
Patent Number(s):
7202143
Application Number:
10/972,760
Assignee:
The Board of Trustees of the University of Arkansas (Little Rock, AR)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
0402-03027-21-0000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Naseem, Hameed A, and Albarghouti, Marwan. Low temperature production of large-grain polycrystalline semiconductors. United States: N. p., 2007. Web.
Naseem, Hameed A, & Albarghouti, Marwan. Low temperature production of large-grain polycrystalline semiconductors. United States.
Naseem, Hameed A, and Albarghouti, Marwan. Tue . "Low temperature production of large-grain polycrystalline semiconductors". United States. https://www.osti.gov/servlets/purl/908831.
@article{osti_908831,
title = {Low temperature production of large-grain polycrystalline semiconductors},
author = {Naseem, Hameed A and Albarghouti, Marwan},
abstractNote = {An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {4}
}

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Works referenced in this record:

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Al induced crystallization of a ‐Si
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Pd induced lateral crystallization of amorphous Si thin films
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Metal induced crystallization of amorphous silicon
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  • Robertson, A. E.; Hultman, L. G.; Hentzell, H. T. G.
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  • https://doi.org/10.1116/1.574618

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Back electrode formation for poly-Si thin film solar cells on glass having AIC-grown seeding layer
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Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon
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Surface morphology of poly-Si films made by aluminium-induced crystallisation on glass substrates
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