Title: Low temperature production of large-grain polycrystalline semiconductors

Abstract

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Inventors:

Naseem, Hameed A ^[1]; Albarghouti, Marwan ^[2]

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+ Show Inventor Affiliations

1. Fayetteville, AR
2. Loudonville, NY

Issue Date:

2007-04-10

Research Org.:

DOE/EPSCOR

Sponsoring Org.:

USDOE

OSTI Identifier:

908831

Patent Number(s):

7202143

Application Number:

10/972,760

Assignee:

The Board of Trustees of the University of Arkansas (Little Rock, AR)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02521 - {Materials}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02672 - {using crystallisation enhancing elements}
H01L29/66757 - {Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate}
H01L29/78675 - {with normal-type structure, e.g. with top gate}
H01L31/1872 - {Recrystallisation}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:  

0402-03027-21-0000

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY