Gray scale x-ray mask
Abstract
The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.
- Inventors:
-
- Livermore, CA
- Seattle, WA
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 908556
- Patent Number(s):
- 7008737
- Application Number:
- 10/804,771
- Assignee:
- Sandia National Laboratories (Livermore, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B29 - WORKING OF PLASTICS B29C - SHAPING OR JOINING OF PLASTICS
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Morales, Alfredo M, and Gonzales, Marcela. Gray scale x-ray mask. United States: N. p., 2006.
Web.
Morales, Alfredo M, & Gonzales, Marcela. Gray scale x-ray mask. United States.
Morales, Alfredo M, and Gonzales, Marcela. Tue .
"Gray scale x-ray mask". United States. https://www.osti.gov/servlets/purl/908556.
@article{osti_908556,
title = {Gray scale x-ray mask},
author = {Morales, Alfredo M and Gonzales, Marcela},
abstractNote = {The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 07 00:00:00 EST 2006},
month = {Tue Mar 07 00:00:00 EST 2006}
}
Works referenced in this record:
High-resolution and high-fidelity x-ray mask structure employing embedded absorbers
journal, November 1988
- Chou, S. Y.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, Issue 6