Method of transferring a thin crystalline semiconductor layer
Abstract
A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.
- Inventors:
-
- Sante Fe, NM
- Los Alamos, NM
- Mesa, AZ
- Issue Date:
- Research Org.:
- Univ. of California (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 904223
- Patent Number(s):
- 7153761
- Application Number:
- 11/243,010
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Nastasi, Michael A, Shao, Lin, and Theodore, N David. Method of transferring a thin crystalline semiconductor layer. United States: N. p., 2006.
Web.
Nastasi, Michael A, Shao, Lin, & Theodore, N David. Method of transferring a thin crystalline semiconductor layer. United States.
Nastasi, Michael A, Shao, Lin, and Theodore, N David. Tue .
"Method of transferring a thin crystalline semiconductor layer". United States. https://www.osti.gov/servlets/purl/904223.
@article{osti_904223,
title = {Method of transferring a thin crystalline semiconductor layer},
author = {Nastasi, Michael A and Shao, Lin and Theodore, N David},
abstractNote = {A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {12}
}
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Works referenced in this record:
Epitaxial layer transfer by bond and etch back of porous Si
journal, April 1994
- Yonehara, Takao; Sakaguchi, Kiyofumi; Sato, Nobuhiko
- Applied Physics Letters, Vol. 64, Issue 16
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
journal, January 1986
- Ishizaka, Akitoshi
- Journal of The Electrochemical Society, Vol. 133, Issue 4