Photovoltaic and thermophotovoltaic devices with quantum barriers
Abstract
A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.
- Inventors:
-
- Jefferson Hills, PA
- Issue Date:
- Research Org.:
- Bettis Atomic Power Lab. (BAPL), West Mifflin, PA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 902759
- Patent Number(s):
- 7202411
- Application Number:
- 10/426,802
- Assignee:
- United States of America Department of Energy (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC11-93PN38195
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2003 May 01
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 36 MATERIALS SCIENCE
Citation Formats
Wernsman, Bernard R. Photovoltaic and thermophotovoltaic devices with quantum barriers. United States: N. p., 2007.
Web.
Wernsman, Bernard R. Photovoltaic and thermophotovoltaic devices with quantum barriers. United States.
Wernsman, Bernard R. Tue .
"Photovoltaic and thermophotovoltaic devices with quantum barriers". United States. https://www.osti.gov/servlets/purl/902759.
@article{osti_902759,
title = {Photovoltaic and thermophotovoltaic devices with quantum barriers},
author = {Wernsman, Bernard R},
abstractNote = {A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {4}
}