Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth
Abstract
In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 894278
- Patent Number(s):
- 6984263
- Application Number:
- TRN: US200701%%294
- Assignee:
- NREL
- DOE Contract Number:
- AC36-99-GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; AVAILABILITY; CONTAINERS; CONVECTION; CRUCIBLES; CRYSTAL GROWTH; HEAT TRANSFER; MONOCRYSTALS; SHAPE; SHALLOW MELT APPARATUS; SEMICONTINUOUS CZOCHRALSKI CRYSTAL GROWTH; SEMICONDUCTOR MELT; Solar Energy - Photovoltaics; Silicon Materials and Devices
Citation Formats
Wang, T, and Ciszek, T F. Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth. United States: N. p., 2006.
Web.
Wang, T, & Ciszek, T F. Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth. United States.
Wang, T, and Ciszek, T F. Tue .
"Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth". United States.
@article{osti_894278,
title = {Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth},
author = {Wang, T and Ciszek, T F},
abstractNote = {In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {1}
}