Voltage-Matched, Monolithic, Multi-Band-Gap Devices

Wanlass, M W; Mascarenhas, A

Title: Voltage-Matched, Monolithic, Multi-Band-Gap Devices

Full Record
Other Related Research

Abstract

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Inventors:: Wanlass, M W; Mascarenhas, A

Issue Date:: 2006-08-22

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 894202

Patent Number(s):: 7095050

Application Number:: TRN: US200701%%60

Assignee:: NREL

DOE Contract Number:: AC36-99-GO10337

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR DEVICES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; DESIGN; ENERGY GAP; VOLTAGE-MATCHED; MONOLITHIC; MULTI-BAND-GAP DEVICES; Solar Energy - Photovoltaics; Basic Sciences; Materials Science and Semiconductors

Citation Formats


                    Wanlass, M W, and Mascarenhas, A. Voltage-Matched, Monolithic, Multi-Band-Gap Devices.  United States: N. p., 2006. 
        Web.

Copy to clipboard


                    Wanlass, M W, & Mascarenhas, A. Voltage-Matched, Monolithic, Multi-Band-Gap Devices.  United States.

Copy to clipboard


                    Wanlass, M W, and Mascarenhas, A. Tue .  
        "Voltage-Matched, Monolithic, Multi-Band-Gap Devices".  United States.

Copy to clipboard


                    
@article{osti_894202,

  title        = {Voltage-Matched, Monolithic, Multi-Band-Gap Devices},

  author       = {Wanlass, M W and Mascarenhas, A},

  abstractNote = {Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2006},

  month        = {8}

}

Copy to clipboard

Patent:

Search for the full text at the U.S. Patent and Trademark Office

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Voltage-matched, monolithic, multi-band-gap devices

Patent Wanlass, Mark W.; Mascarenhas, Angelo

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one ormore » « less
Full Text Available
Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

Patent Olson, Jerry M [Lakewood, CO]; Kurtz, Sarah R [Golden, CO]; Friedman, Daniel J [Lakewood, CO]

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductormore » « less
Full Text Available
Monolithic multi-color light emission/detection device

Patent Wanlass, M W

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over amore » single optical fiber. 5 figs. « less
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Patent Wanlass, Mark W.; Carapella, Jeffrey J.

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Full Text Available
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Patent Wanlass, Mark W.; Carapella, Jeffrey J.

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Full Text Available

Similar Records