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Title: A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

Abstract

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Inventors:
 [1];  [2];  [3];  [4];  [5];  [2];  [6];  [7];  [8];  [5]
  1. Oakland, CA
  2. Pleasanton, CA
  3. (Danville, CA)
  4. Hillsborough, OR
  5. Livermore, CA
  6. Evanston, IL
  7. St. Paul, MN
  8. Santa Clara, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
880131
Patent Number(s):
6872455
Application Number:
10/626132
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Sadigh, Babak, Lenosky, Thomas J, Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, and Quong, Andrew. A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein. United States: N. p., 2005. Web.
Sadigh, Babak, Lenosky, Thomas J, Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, & Quong, Andrew. A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein. United States.
Sadigh, Babak, Lenosky, Thomas J, Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, and Quong, Andrew. Tue . "A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein". United States. https://www.osti.gov/servlets/purl/880131.
@article{osti_880131,
title = {A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein},
author = {Sadigh, Babak and Lenosky, Thomas J and Diaz de la Rubia, Tomas and Giles, Martin and Caturla, Maria-Jose and Ozolins, Vidvuds and Asta, Mark and Theiss, Silva and Foad, Majeed and Quong, Andrew},
abstractNote = {A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {3}
}

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