A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

Sadigh, Babak; Lenosky, Thomas J; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

Title: A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

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Abstract

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Inventors:

Sadigh, Babak ^[1]; Lenosky, Thomas J ^[2]; Diaz de la Rubia, Tomas ^[3]; Giles, Martin ^[4]; Caturla, Maria-Jose ^[5]; Ozolins, Vidvuds ^[2]; Asta, Mark ^[6]; Theiss, Silva ^[7]; Foad, Majeed ^[8]; Quong, Andrew ^[5]

Oakland, CA
Pleasanton, CA
(Danville, CA)
Hillsborough, OR
Livermore, CA
Evanston, IL
St. Paul, MN
Santa Clara, CA

Issue Date:: 2005-03-29

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

OSTI Identifier:: 880131

Patent Number(s):: 6872455

Application Number:: 10/626132

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/7842 - {means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
H01L29/1054 - {with a variation of the composition, e.g. channel with strained layer for increasing the mobility}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/605 - {Products containing multiple oriented crystallites, e.g. columnar crystallites}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/161 - including two or more of the elements provided for in group H01L29/16 {, e.g. alloys

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Sadigh, Babak, Lenosky, Thomas J, Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, and Quong, Andrew. A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein.  United States: N. p., 2005. 
        Web.

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                    Sadigh, Babak, Lenosky, Thomas J, Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, & Quong, Andrew. A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein.  United States.

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                    Sadigh, Babak, Lenosky, Thomas J, Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, and Quong, Andrew. Tue .  
        "A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein".  United States.  https://www.osti.gov/servlets/purl/880131.

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@article{osti_880131,

  title        = {A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein},

  author       = {Sadigh, Babak and Lenosky, Thomas J and Diaz de la Rubia, Tomas and Giles, Martin and Caturla, Maria-Jose and Ozolins, Vidvuds and Asta, Mark and Theiss, Silva and Foad, Majeed and Quong, Andrew},

  abstractNote = {A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2005},

  month        = {3}

}

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