Diamond-Silicon Carbide Composite And Method For Preparation Thereof
Abstract
Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.
- Inventors:
-
- Los Alamos, NM
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- OSTI Identifier:
- 880042
- Patent Number(s):
- 6939506
- Application Number:
- 10/448672
- Assignee:
- The Regents of the University of California (Los Alamos, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Qian, Jiang, and Zhao, Yusheng. Diamond-Silicon Carbide Composite And Method For Preparation Thereof. United States: N. p., 2005.
Web.
Qian, Jiang, & Zhao, Yusheng. Diamond-Silicon Carbide Composite And Method For Preparation Thereof. United States.
Qian, Jiang, and Zhao, Yusheng. Tue .
"Diamond-Silicon Carbide Composite And Method For Preparation Thereof". United States. https://www.osti.gov/servlets/purl/880042.
@article{osti_880042,
title = {Diamond-Silicon Carbide Composite And Method For Preparation Thereof},
author = {Qian, Jiang and Zhao, Yusheng},
abstractNote = {Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {9}
}
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