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Title: Method of making an icosahedral boride structure

Abstract

A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.

Inventors:
 [1];  [2];  [3];  [4];  [5]
  1. 3712 Silver Ave. SE., Albuquerque, NM 87108
  2. 939 Buena Vista Dr., SE., Apt. F203, Albuquerque, NM 87106
  3. 4409 Buckingham Dr., El Paso, TX 79902
  4. 62 Avenida Del Sol, Cedar Crest, NM 87008
  5. 1502 Harvard Ct. NE., Albuquerque, NM 87106
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
879999
Patent Number(s):
6841456
Application Number:
10/418018
Assignee:
OSTI
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
G - PHYSICS G21 - NUCLEAR PHYSICS G21H - OBTAINING ENERGY FROM RADIOACTIVE SOURCES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Hersee, Stephen D, Wang, Ronghua, Zubia, David, Aselage, Terrance L, and Emin, David. Method of making an icosahedral boride structure. United States: N. p., 2005. Web.
Hersee, Stephen D, Wang, Ronghua, Zubia, David, Aselage, Terrance L, & Emin, David. Method of making an icosahedral boride structure. United States.
Hersee, Stephen D, Wang, Ronghua, Zubia, David, Aselage, Terrance L, and Emin, David. Tue . "Method of making an icosahedral boride structure". United States. https://www.osti.gov/servlets/purl/879999.
@article{osti_879999,
title = {Method of making an icosahedral boride structure},
author = {Hersee, Stephen D and Wang, Ronghua and Zubia, David and Aselage, Terrance L and Emin, David},
abstractNote = {A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {1}
}

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Works referenced in this record:

Defect clustering and self-healing of electron-irradiated boron-rich solids
journal, May 1995


Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH 3 -B 2 H 6 -H 2 System
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Chemical vapour deposition of boron subarsenide using halide reactants
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Thermoelectric Properties of Boron and Boron Phosphide CVD Wafers
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Struktur des borreichen Borphosphids
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The Preparation and Properties of Boron Phosphides and Arsenides 1
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Crystals and Epitaxial Layers of Boron Phosphide
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Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH 3 -B 2 H 6 -H 2 System
journal, October 1973


Double-Layer Epitaxial Growth of Si and B 13 P 2 on Si Substrates and Some Electrical Properties of Si Layers
journal, August 1974


Epitaxial Growth of Rhombohedral Boron Phosphide Single Crystalline Films by Chemical Vapor Deposition
journal, October 1997