Method of making an icosahedral boride structure
Abstract
A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.
- Inventors:
-
- 3712 Silver Ave. SE., Albuquerque, NM 87108
- 939 Buena Vista Dr., SE., Apt. F203, Albuquerque, NM 87106
- 4409 Buckingham Dr., El Paso, TX 79902
- 62 Avenida Del Sol, Cedar Crest, NM 87008
- 1502 Harvard Ct. NE., Albuquerque, NM 87106
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 879999
- Patent Number(s):
- 6841456
- Application Number:
- 10/418018
- Assignee:
- OSTI
- Patent Classifications (CPCs):
-
G - PHYSICS G21 - NUCLEAR PHYSICS G21H - OBTAINING ENERGY FROM RADIOACTIVE SOURCES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Hersee, Stephen D, Wang, Ronghua, Zubia, David, Aselage, Terrance L, and Emin, David. Method of making an icosahedral boride structure. United States: N. p., 2005.
Web.
Hersee, Stephen D, Wang, Ronghua, Zubia, David, Aselage, Terrance L, & Emin, David. Method of making an icosahedral boride structure. United States.
Hersee, Stephen D, Wang, Ronghua, Zubia, David, Aselage, Terrance L, and Emin, David. Tue .
"Method of making an icosahedral boride structure". United States. https://www.osti.gov/servlets/purl/879999.
@article{osti_879999,
title = {Method of making an icosahedral boride structure},
author = {Hersee, Stephen D and Wang, Ronghua and Zubia, David and Aselage, Terrance L and Emin, David},
abstractNote = {A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {1}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Defect clustering and self-healing of electron-irradiated boron-rich solids
journal, May 1995
- Carrard, M.; Emin, D.; Zuppiroli, L.
- Physical Review B, Vol. 51, Issue 17
Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH 3 -B 2 H 6 -H 2 System
journal, December 1973
- Hirayama, Makoto; Shohno, Katsufusa
- Japanese Journal of Applied Physics, Vol. 12, Issue 12
Chemical vapour deposition of boron subarsenide using halide reactants
journal, December 1986
- Correia, L. A.; Van Oort, R. C.; Van Der Put, P. J.
- Reactivity of Solids, Vol. 2, Issue 3
Thermoelectric Properties of Boron and Boron Phosphide CVD Wafers
journal, October 1997
- Kumashiro, Y.; Yokoyama, T.; Sato, A.
- Journal of Solid State Chemistry, Vol. 133, Issue 1
New group III-group V compounds: BP and BAs
journal, April 1958
- Perri, J. A.; La Placa, S.; Post, B.
- Acta Crystallographica, Vol. 11, Issue 4
Struktur des borreichen Borphosphids
journal, November 1974
- Amberger, E.; Rauh, P. A.
- Acta Crystallographica Section B Structural Crystallography and Crystal Chemistry, Vol. 30, Issue 11
The Preparation and Properties of Boron Phosphides and Arsenides 1
journal, March 1960
- Williams, Forrest V.; Ruehrwein, Robert A.
- Journal of the American Chemical Society, Vol. 82, Issue 6
Preparation and Properties of Boron Arsenide Films
journal, January 1974
- Chu, T. L.; Hyslop, A. E.
- Journal of The Electrochemical Society, Vol. 121, Issue 3
Crystals and Epitaxial Layers of Boron Phosphide
journal, January 1971
- Chu, T. L.; Jackson, J. M.; Hyslop, A. E.
- Journal of Applied Physics, Vol. 42, Issue 1
Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH 3 -B 2 H 6 -H 2 System
journal, October 1973
- Takigawa, Mitsuharu; Hirayama, Makoto; Shohno, Katsufusa
- Japanese Journal of Applied Physics, Vol. 12, Issue 10
Double-Layer Epitaxial Growth of Si and B 13 P 2 on Si Substrates and Some Electrical Properties of Si Layers
journal, August 1974
- Takenaka, Takao; Shohno, Katsufusa
- Japanese Journal of Applied Physics, Vol. 13, Issue 8
Epitaxial Growth of Rhombohedral Boron Phosphide Single Crystalline Films by Chemical Vapor Deposition
journal, October 1997
- Kumashiro, Y.; Yoshizawa, H.; Yokoyama, T.
- Journal of Solid State Chemistry, Vol. 133, Issue 1