Ultrathin Dielectric Oxide Films On Silicon
Abstract
A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr.sub.4 (OPr.sup.n).sub.16 to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.
- Inventors:
-
- Champaign, IL
- Liverpool, GB
- Urbana, IL
- Issue Date:
- Research Org.:
- University of Ilinois
- OSTI Identifier:
- 879962
- Patent Number(s):
- 6794315
- Application Number:
- 10/384186
- Assignee:
- Board of Trustees of the University of Illinois (Urbana, IL)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-91ER45439
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Klemperer, Walter G, Lee, Jason, Mikalsen, Erik A, and Payne, David A. Ultrathin Dielectric Oxide Films On Silicon. United States: N. p., 2004.
Web.
Klemperer, Walter G, Lee, Jason, Mikalsen, Erik A, & Payne, David A. Ultrathin Dielectric Oxide Films On Silicon. United States.
Klemperer, Walter G, Lee, Jason, Mikalsen, Erik A, and Payne, David A. Tue .
"Ultrathin Dielectric Oxide Films On Silicon". United States. https://www.osti.gov/servlets/purl/879962.
@article{osti_879962,
title = {Ultrathin Dielectric Oxide Films On Silicon},
author = {Klemperer, Walter G and Lee, Jason and Mikalsen, Erik A and Payne, David A},
abstractNote = {A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr.sub.4 (OPr.sup.n).sub.16 to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {9}
}