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Title: Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon

Abstract

A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

Inventors:
 [1];  [1];  [1];  [1]
  1. Los Alamos, NM
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
OSTI Identifier:
879933
Patent Number(s):
6921741
Application Number:
10/359808
Assignee:
The Regents of the University of California (Los Alamos, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Arendt, Paul N, Foltyn, Stephen R, Groves, James R, and Jia, Quanxi. Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon. United States: N. p., 2005. Web.
Arendt, Paul N, Foltyn, Stephen R, Groves, James R, & Jia, Quanxi. Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon. United States.
Arendt, Paul N, Foltyn, Stephen R, Groves, James R, and Jia, Quanxi. Tue . "Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon". United States. https://www.osti.gov/servlets/purl/879933.
@article{osti_879933,
title = {Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon},
author = {Arendt, Paul N and Foltyn, Stephen R and Groves, James R and Jia, Quanxi},
abstractNote = {A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {7}
}

Patent:

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Works referenced in this record:

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Recent progress in continuously processed IBAD MgO template meters for HTS applications
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