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Title: Ionizing Radiation Detector

Abstract

A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH.sub.4 F and 10 w/o H.sub.2 O.sub.2 in water after attaching electrical contacts to the crystal surface.

Inventors:
 [1];  [2];  [1];  [2]
  1. (Nashville, TN)
  2. (Livermore, CA)
Issue Date:
Research Org.:
Sandia Corporation
OSTI Identifier:
879898
Patent Number(s):
6649915
Application Number:
10/325995
Assignee:
Sandia National Laboratories (Livermore, CA) OSTI
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Wright, Gomez W., James, Ralph B., Burger, Arnold, and Chinn, Douglas A. Ionizing Radiation Detector. United States: N. p., 2003. Web.
Wright, Gomez W., James, Ralph B., Burger, Arnold, & Chinn, Douglas A. Ionizing Radiation Detector. United States.
Wright, Gomez W., James, Ralph B., Burger, Arnold, and Chinn, Douglas A. Tue . "Ionizing Radiation Detector". United States. https://www.osti.gov/servlets/purl/879898.
@article{osti_879898,
title = {Ionizing Radiation Detector},
author = {Wright, Gomez W. and James, Ralph B. and Burger, Arnold and Chinn, Douglas A.},
abstractNote = {A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH.sub.4 F and 10 w/o H.sub.2 O.sub.2 in water after attaching electrical contacts to the crystal surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {11}
}

Patent:

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