skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxial CoSi2 on MOS devices

Abstract

An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

Inventors:
 [1];  [2];  [3];  [3]
  1. Urbana, IL
  2. Daejeon, KR
  3. Champaign, IL
Issue Date:
Research Org.:
University of Ilinois
OSTI Identifier:
879855
Patent Number(s):
6846359
Application Number:
10/280668
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
FG02-91ER45439
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Lim, Chong Wee, Shin, Chan Soo, Petrov, Ivan Georgiev, and Greene, Joseph E. Epitaxial CoSi2 on MOS devices. United States: N. p., 2005. Web.
Lim, Chong Wee, Shin, Chan Soo, Petrov, Ivan Georgiev, & Greene, Joseph E. Epitaxial CoSi2 on MOS devices. United States.
Lim, Chong Wee, Shin, Chan Soo, Petrov, Ivan Georgiev, and Greene, Joseph E. Tue . "Epitaxial CoSi2 on MOS devices". United States. https://www.osti.gov/servlets/purl/879855.
@article{osti_879855,
title = {Epitaxial CoSi2 on MOS devices},
author = {Lim, Chong Wee and Shin, Chan Soo and Petrov, Ivan Georgiev and Greene, Joseph E},
abstractNote = {An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {1}
}

Patent:

Save / Share:

Works referenced in this record:

On the formation of epitaxial CoSi 2 from the reaction of Si with a Co/Ti bilayer
journal, January 1995


Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001)
journal, March 2001


CoSi2 formation in the presence of interfacial silicon oxide
journal, May 1999


Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt–carbon films on (100) Si substrate
journal, September 1999