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Title: Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

Abstract

A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Inventors:
 [1];  [2];  [3];  [4];  [4]
  1. Urbana, IL
  2. Daejeon, KR
  3. Troy, NY
  4. Champaign, IL
Issue Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
OSTI Identifier:
879824
Patent Number(s):
6797598
Application Number:
10/226101
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-91ER45439
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Lim, Chong Wee, Shin, Chan Soo, Gall, Daniel, Petrov, Ivan Georgiev, and Greene, Joseph E. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha. United States: N. p., 2004. Web.
Lim, Chong Wee, Shin, Chan Soo, Gall, Daniel, Petrov, Ivan Georgiev, & Greene, Joseph E. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha. United States.
Lim, Chong Wee, Shin, Chan Soo, Gall, Daniel, Petrov, Ivan Georgiev, and Greene, Joseph E. Tue . "Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha". United States. https://www.osti.gov/servlets/purl/879824.
@article{osti_879824,
title = {Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha},
author = {Lim, Chong Wee and Shin, Chan Soo and Gall, Daniel and Petrov, Ivan Georgiev and Greene, Joseph E},
abstractNote = {A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {9}
}

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Works referenced in this record:

On the formation of epitaxial CoSi 2 from the reaction of Si with a Co/Ti bilayer
journal, January 1995


Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001)
journal, March 2001


Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt–carbon films on (100) Si substrate
journal, September 1999