Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E

Title: Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

Abstract

A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Inventors:

Lim, Chong Wee ^[1]; Shin, Chan Soo ^[2]; Gall, Daniel ^[3]; Petrov, Ivan Georgiev ^[4]; Greene, Joseph E ^[4]

Urbana, IL
Daejeon, KR
Troy, NY
Champaign, IL

Issue Date:: 2004-09-28

Research Org.:: Univ. of Illinois at Urbana-Champaign, IL (United States)

OSTI Identifier:: 879824

Patent Number(s):: 6797598

Application Number:: 10/226101

Assignee:: The Board of Trustees of the University of Illinois (Urbana, IL)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/665 - {using self aligned silicidation, i.e. salicide
H01L21/28518 - {the conductive layers comprising silicides
H01L29/6659 - {with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET}
H01L21/26506 - {in group IV semiconductors}

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DOE Contract Number:: FG02-91ER45439

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Lim, Chong Wee, Shin, Chan Soo, Gall, Daniel, Petrov, Ivan Georgiev, and Greene, Joseph E. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha.  United States: N. p., 2004. 
        Web.

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                    Lim, Chong Wee, Shin, Chan Soo, Gall, Daniel, Petrov, Ivan Georgiev, & Greene, Joseph E. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha.  United States.

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                    Lim, Chong Wee, Shin, Chan Soo, Gall, Daniel, Petrov, Ivan Georgiev, and Greene, Joseph E. Tue .  
        "Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha".  United States.  https://www.osti.gov/servlets/purl/879824.

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@article{osti_879824,

  title        = {Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha},

  author       = {Lim, Chong Wee and Shin, Chan Soo and Gall, Daniel and Petrov, Ivan Georgiev and Greene, Joseph E},

  abstractNote = {A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2004},

  month        = {9}

}

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Works referenced in this record:

On the formation of epitaxial CoSi ₂ from the reaction of Si with a Co/Ti bilayer
journal, January 1995

Zhang, S. ‐L.; Cardenas, J.; d’Heurle, F. M.
Applied Physics Letters, Vol. 66, Issue 1
https://doi.org/10.1063/1.114182

Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001)
journal, March 2001

Falke, M.; Gebhardt, B.; Beddies, G.
Microelectronic Engineering, Vol. 55, Issue 1-4
https://doi.org/10.1016/S0167-9317(00)00444-5

Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt–carbon films on (100) Si substrate
journal, September 1999

Rhee, Hwa Sung; Ahn, Byung Tae; Sohn, Dong Kyun
Journal of Applied Physics, Vol. 86, Issue 6
https://doi.org/10.1063/1.371228

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Similar Records

Title: Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

Abstract

Citation Formats

On the formation of epitaxial CoSi 2 from the reaction of Si with a Co/Ti bilayer journal, January 1995

Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001) journal, March 2001

Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt–carbon films on (100) Si substrate journal, September 1999

On the formation of epitaxial CoSi ₂ from the reaction of Si with a Co/Ti bilayer
journal, January 1995

Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001)
journal, March 2001

Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt–carbon films on (100) Si substrate
journal, September 1999