Global to push GA events into
skip to main content

Title: Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies

A method for forming atomic-scale structures on a surface of a substrate on a large-scale includes creating a predetermined amount of surface vacancies on the surface of the substrate by removing an amount of atoms on the surface of the material corresponding to the predetermined amount of the surface vacancies. Once the surface vacancies have been created, atoms of a desired structure material are deposited on the surface of the substrate to enable the surface vacancies and the atoms of the structure material to interact. The interaction causes the atoms of the structure material to form the atomic-scale structures.
Inventors:
 [1];  [1];  [2];  [2]
  1. (Urbana, IL)
  2. (Champaign, IL)
Issue Date:
OSTI Identifier:
879768
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL) CHO
Patent Number(s):
US 6,762,131
Application Number:
10/123031
Contract Number:
FG02-91ER45439
Research Org:
University of Ilinois
Country of Publication:
United States
Language:
English