Nanowires, nanostructures and devices fabricated therefrom
Abstract
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
- Inventors:
-
- Orinda, CA
- Santa Cruz, CA
- Moraga, CA
- Berkeley, CA
- Walnut Creek, CA
- Kensington, CA
- Oakland, CA
- Schaffhausen, CH
- Los Angeles, CA
- Albany, CA
- El Cerrito, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 879762
- Patent Number(s):
- 6882051
- Application Number:
- 10/112578
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Majumdar, Arun, Shakouri, Ali, Sands, Timothy D, Yang, Peidong, Mao, Samuel S, Russo, Richard E, Feick, Henning, Weber, Eicke R, Kind, Hannes, Huang, Michael, Yan, Haoquan, Wu, Yiying, and Fan, Rong. Nanowires, nanostructures and devices fabricated therefrom. United States: N. p., 2005.
Web.
Majumdar, Arun, Shakouri, Ali, Sands, Timothy D, Yang, Peidong, Mao, Samuel S, Russo, Richard E, Feick, Henning, Weber, Eicke R, Kind, Hannes, Huang, Michael, Yan, Haoquan, Wu, Yiying, & Fan, Rong. Nanowires, nanostructures and devices fabricated therefrom. United States.
Majumdar, Arun, Shakouri, Ali, Sands, Timothy D, Yang, Peidong, Mao, Samuel S, Russo, Richard E, Feick, Henning, Weber, Eicke R, Kind, Hannes, Huang, Michael, Yan, Haoquan, Wu, Yiying, and Fan, Rong. Tue .
"Nanowires, nanostructures and devices fabricated therefrom". United States. https://www.osti.gov/servlets/purl/879762.
@article{osti_879762,
title = {Nanowires, nanostructures and devices fabricated therefrom},
author = {Majumdar, Arun and Shakouri, Ali and Sands, Timothy D and Yang, Peidong and Mao, Samuel S and Russo, Richard E and Feick, Henning and Weber, Eicke R and Kind, Hannes and Huang, Michael and Yan, Haoquan and Wu, Yiying and Fan, Rong},
abstractNote = {One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {4}
}
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