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Title: Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

Abstract

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Inventors:
 [1];  [1]
  1. Salt Lake City, UT
Issue Date:
Research Org.:
Univ. of Utah, Salt Lake City, UT (United States)
OSTI Identifier:
879756
Patent Number(s):
6,660,375
Application Number:
10/089480
Assignee:
University of Utah Research Foundation (Salt Lake City, UT)
DOE Contract Number:  
FG03-93ER45504
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Miller, Joel S, and Pokhodnya, Kostyantyn I. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets. United States: N. p., 2003. Web.
Miller, Joel S, & Pokhodnya, Kostyantyn I. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets. United States.
Miller, Joel S, and Pokhodnya, Kostyantyn I. Tue . "Low Temperature Chemical Vapor Deposition Of Thin Film Magnets". United States. https://www.osti.gov/servlets/purl/879756.
@article{osti_879756,
title = {Low Temperature Chemical Vapor Deposition Of Thin Film Magnets},
author = {Miller, Joel S and Pokhodnya, Kostyantyn I},
abstractNote = {A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {12}
}

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