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Title: Etching Of Semiconductor Wafer Edges

Abstract

A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

Inventors:
 [1];  [2]
  1. Billerica, MA
  2. Dunbarton, NH
Issue Date:
OSTI Identifier:
879579
Patent Number(s):
6660643
Application Number:
09/261616
Assignee:
RWE Schott Solar, Inc. (Billerica, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
NREL-ZAF-6-14271-13
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Kardauskas, Michael J, and Piwczyk, Bernhard P. Etching Of Semiconductor Wafer Edges. United States: N. p., 2003. Web.
Kardauskas, Michael J, & Piwczyk, Bernhard P. Etching Of Semiconductor Wafer Edges. United States.
Kardauskas, Michael J, and Piwczyk, Bernhard P. Tue . "Etching Of Semiconductor Wafer Edges". United States. https://www.osti.gov/servlets/purl/879579.
@article{osti_879579,
title = {Etching Of Semiconductor Wafer Edges},
author = {Kardauskas, Michael J and Piwczyk, Bernhard P},
abstractNote = {A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {12}
}

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