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Title: Etching Of Semiconductor Wafer Edges

Abstract

A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

Inventors:
 [1];  [2]
  1. (Billerica, MA)
  2. (Dunbarton, NH)
Issue Date:
OSTI Identifier:
879579
Patent Number(s):
6660643
Application Number:
09/261616
Assignee:
RWE Schott Solar, Inc. (Billerica, MA) OSTI
DOE Contract Number:  
NREL-ZAF-6-14271-13
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Kardauskas, Michael J., and Piwczyk, Bernhard P. Etching Of Semiconductor Wafer Edges. United States: N. p., 2003. Web.
Kardauskas, Michael J., & Piwczyk, Bernhard P. Etching Of Semiconductor Wafer Edges. United States.
Kardauskas, Michael J., and Piwczyk, Bernhard P. Tue . "Etching Of Semiconductor Wafer Edges". United States. https://www.osti.gov/servlets/purl/879579.
@article{osti_879579,
title = {Etching Of Semiconductor Wafer Edges},
author = {Kardauskas, Michael J. and Piwczyk, Bernhard P.},
abstractNote = {A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {12}
}

Patent:

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