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Title: Photo-Spectrometer Realized In A Standard Cmos Ic Process

Abstract

A spectrometer, comprises: a semiconductor having a silicon substrate, the substrate having integrally formed thereon a plurality of layers forming photo diodes, each of the photo diodes having an independent spectral response to an input spectra within a spectral range of the semiconductor and each of the photo diodes formed only from at least one of the plurality of layers of the semiconductor above the substrate; and, a signal processing circuit for modifying signals from the photo diodes with respective weights, the weighted signals being representative of a specific spectral response. The photo diodes have different junction depths and different polycrystalline silicon and oxide coverings. The signal processing circuit applies the respective weights and sums the weighted signals. In a corresponding method, a spectrometer is manufactured by manipulating only the standard masks, materials and fabrication steps of standard semiconductor processing, and integrating the spectrometer with a signal processing circuit.

Inventors:
 [1];  [1];  [1];  [2];  [3];  [1]
  1. Knoxville, TN
  2. Oak Ridge, TN
  3. (Tucson, AZ)
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
879528
Patent Number(s):
5965873
Application Number:
09/082082
Assignee:
Lockheed Martin Energy Research Corporation (Oak Ridge, TN)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Simpson, Michael L, Ericson, M Nance, Dress, William B, Jellison, Gerald E, Sitter, Jr., David N., and Wintenberg, Alan L. Photo-Spectrometer Realized In A Standard Cmos Ic Process. United States: N. p., 1999. Web.
Simpson, Michael L, Ericson, M Nance, Dress, William B, Jellison, Gerald E, Sitter, Jr., David N., & Wintenberg, Alan L. Photo-Spectrometer Realized In A Standard Cmos Ic Process. United States.
Simpson, Michael L, Ericson, M Nance, Dress, William B, Jellison, Gerald E, Sitter, Jr., David N., and Wintenberg, Alan L. Tue . "Photo-Spectrometer Realized In A Standard Cmos Ic Process". United States. https://www.osti.gov/servlets/purl/879528.
@article{osti_879528,
title = {Photo-Spectrometer Realized In A Standard Cmos Ic Process},
author = {Simpson, Michael L and Ericson, M Nance and Dress, William B and Jellison, Gerald E and Sitter, Jr., David N. and Wintenberg, Alan L},
abstractNote = {A spectrometer, comprises: a semiconductor having a silicon substrate, the substrate having integrally formed thereon a plurality of layers forming photo diodes, each of the photo diodes having an independent spectral response to an input spectra within a spectral range of the semiconductor and each of the photo diodes formed only from at least one of the plurality of layers of the semiconductor above the substrate; and, a signal processing circuit for modifying signals from the photo diodes with respective weights, the weighted signals being representative of a specific spectral response. The photo diodes have different junction depths and different polycrystalline silicon and oxide coverings. The signal processing circuit applies the respective weights and sums the weighted signals. In a corresponding method, a spectrometer is manufactured by manipulating only the standard masks, materials and fabrication steps of standard semiconductor processing, and integrating the spectrometer with a signal processing circuit.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {10}
}

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