Thin Film Transistors On Plastic Substrates
Abstract
A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.
- Inventors:
-
- Mountain View, CA
- San Ramon, CA
- Portola Valley, CA
- Livermore, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 879500
- Patent Number(s):
- 6680485
- Application Number:
- 09/025006
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Carey, Paul G, Smith, Patrick M, Sigmon, Thomas W, and Aceves, Randy C. Thin Film Transistors On Plastic Substrates. United States: N. p., 2004.
Web.
Carey, Paul G, Smith, Patrick M, Sigmon, Thomas W, & Aceves, Randy C. Thin Film Transistors On Plastic Substrates. United States.
Carey, Paul G, Smith, Patrick M, Sigmon, Thomas W, and Aceves, Randy C. Tue .
"Thin Film Transistors On Plastic Substrates". United States. https://www.osti.gov/servlets/purl/879500.
@article{osti_879500,
title = {Thin Film Transistors On Plastic Substrates},
author = {Carey, Paul G and Smith, Patrick M and Sigmon, Thomas W and Aceves, Randy C},
abstractNote = {A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 20 00:00:00 EST 2004},
month = {Tue Jan 20 00:00:00 EST 2004}
}