Process Of Bonding Copper And Tungsten
Abstract
Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.
- Inventors:
-
- St. Charles, MO
- Manchester, MO
- Ballwin, MO
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 879448
- Patent Number(s):
- 6089444
- Application Number:
- 08/921581
- Assignee:
- McDonnell Douglas Corporation (St. Louis, MO)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B22 - CASTING B22F - WORKING METALLIC POWDER
B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING
- DOE Contract Number:
- AC-3013
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Slattery, Kevin T, Driemeyer, Daniel E, and Davis, John W. Process Of Bonding Copper And Tungsten. United States: N. p., 2000.
Web.
Slattery, Kevin T, Driemeyer, Daniel E, & Davis, John W. Process Of Bonding Copper And Tungsten. United States.
Slattery, Kevin T, Driemeyer, Daniel E, and Davis, John W. Tue .
"Process Of Bonding Copper And Tungsten". United States. https://www.osti.gov/servlets/purl/879448.
@article{osti_879448,
title = {Process Of Bonding Copper And Tungsten},
author = {Slattery, Kevin T and Driemeyer, Daniel E and Davis, John W},
abstractNote = {Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {7}
}