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Title: Process Of Bonding Copper And Tungsten

Abstract

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Inventors:
 [1];  [2];  [3]
  1. (St. Charles, MO)
  2. (Manchester, MO)
  3. (Ballwin, MO)
Issue Date:
Research Org.:
Sandia National Laboratories
OSTI Identifier:
879448
Patent Number(s):
6089444
Application Number:
08/921581
Assignee:
McDonnell Douglas Corporation (St. Louis, MO) OSTI
DOE Contract Number:  
AC-3013
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Slattery, Kevin T., Driemeyer, Daniel E., and Davis, John W. Process Of Bonding Copper And Tungsten. United States: N. p., 2000. Web.
Slattery, Kevin T., Driemeyer, Daniel E., & Davis, John W. Process Of Bonding Copper And Tungsten. United States.
Slattery, Kevin T., Driemeyer, Daniel E., and Davis, John W. Tue . "Process Of Bonding Copper And Tungsten". United States. https://www.osti.gov/servlets/purl/879448.
@article{osti_879448,
title = {Process Of Bonding Copper And Tungsten},
author = {Slattery, Kevin T. and Driemeyer, Daniel E. and Davis, John W.},
abstractNote = {Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {7}
}

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